IXFH160N15T2
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IXYS IXFH160N15T2

Manufacturer No:
IXFH160N15T2
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFH160N15T2 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 150V 160A TO247AD
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:160A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:9mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:253 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:15000 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):880W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247AD (IXFH)
Package / Case:TO-247-3
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Similar Products

Part Number IXFH160N15T2 IXFH110N15T2   IXFH160N15T  
Manufacturer IXYS IXYS IXYS
Product Status Active Active Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V 150 V 150 V
Current - Continuous Drain (Id) @ 25°C 160A (Tc) 110A (Tc) 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 9mOhm @ 80A, 10V 13mOhm @ 500mA, 10V 9.6mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 1mA 4.5V @ 250µA 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 253 nC @ 10 V 150 nC @ 10 V 160 nC @ 10 V
Vgs (Max) ±20V ±20V ±30V
Input Capacitance (Ciss) (Max) @ Vds 15000 pF @ 25 V 8600 pF @ 25 V 8800 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 880W (Tc) 480W (Tc) 830W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-247AD (IXFH) TO-247AD (IXFH) TO-247AD (IXFH)
Package / Case TO-247-3 TO-247-3 TO-247-3

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