IXFH15N100Q3
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IXYS IXFH15N100Q3

Manufacturer No:
IXFH15N100Q3
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFH15N100Q3 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 1000V 15A TO247AD
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:15A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.05Ohm @ 7.5A, 10V
Vgs(th) (Max) @ Id:6.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs:64 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:3250 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):690W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247AD (IXFH)
Package / Case:TO-247-3
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Similar Products

Part Number IXFH15N100Q3 IXFH18N100Q3   IXFH15N100Q  
Manufacturer IXYS IXYS IXYS
Product Status Active Active Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V 1000 V 1000 V
Current - Continuous Drain (Id) @ 25°C 15A (Tc) 18A (Tc) 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 1.05Ohm @ 7.5A, 10V 660mOhm @ 9A, 10V 700mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 6.5V @ 4mA 6.5V @ 4mA 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 64 nC @ 10 V 90 nC @ 10 V 170 nC @ 10 V
Vgs (Max) ±30V ±30V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3250 pF @ 25 V 4890 pF @ 25 V 4500 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 690W (Tc) 830W (Tc) 360W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-247AD (IXFH) TO-247AD (IXFH) TO-247AD (IXFH)
Package / Case TO-247-3 TO-247-3 TO-247-3

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