IXFH14N80P
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IXYS IXFH14N80P

Manufacturer No:
IXFH14N80P
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFH14N80P Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 800V 14A TO247AD
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:14A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:720mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id:5.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs:61 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:3900 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):400W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247AD (IXFH)
Package / Case:TO-247-3
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Similar Products

Part Number IXFH14N80P IXFH16N80P   IXFH24N80P   IXFC14N80P   IXFH10N80P   IXFH12N80P   IXFH14N60P   IXFH14N80  
Manufacturer IXYS IXYS IXYS IXYS IXYS IXYS IXYS IXYS
Product Status Active Active Active Obsolete Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V 800 V 800 V 800 V 800 V 600 V 800 V
Current - Continuous Drain (Id) @ 25°C 14A (Tc) 16A (Tc) 24A (Tc) 8A (Tc) 10A (Tc) 12A (Tc) 14A (Tc) 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 720mOhm @ 500mA, 10V 600mOhm @ 500mA, 10V 400mOhm @ 12A, 10V 770mOhm @ 7A, 10V 1.1Ohm @ 5A, 10V 850mOhm @ 500mA, 10V 550mOhm @ 7A, 10V 700mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 5.5V @ 4mA 5V @ 4mA 5V @ 4mA 5.5V @ 4mA 5.5V @ 2.5mA 5.5V @ 2.5mA 5.5V @ 2.5mA 4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 61 nC @ 10 V 71 nC @ 10 V 105 nC @ 10 V 61 nC @ 10 V 40 nC @ 10 V 51 nC @ 10 V 36 nC @ 10 V 200 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3900 pF @ 25 V 4600 pF @ 25 V 7200 pF @ 25 V 3900 pF @ 25 V 2050 pF @ 25 V 2800 pF @ 25 V 2500 pF @ 25 V 4870 pF @ 25 V
FET Feature - - - - - - - -
Power Dissipation (Max) 400W (Tc) 460W (Tc) 650W (Tc) 130W (Tc) 300W (Tc) 360W (Tc) 300W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-247AD (IXFH) TO-247AD (IXFH) TO-247AD (IXFH) ISOPLUS220™ TO-247AD (IXFH) TO-247AD (IXFH) TO-247AD (IXFH) TO-247AD (IXFH)
Package / Case TO-247-3 TO-247-3 TO-247-3 ISOPLUS220™ TO-247-3 TO-247-3 TO-247-3 TO-247-3

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