IXFH12N100
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IXYS IXFH12N100

Manufacturer No:
IXFH12N100
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFH12N100 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 1000V 12A TO247AD
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.05Ohm @ 6A, 10V
Vgs(th) (Max) @ Id:4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs:155 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4000 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247AD (IXFH)
Package / Case:TO-247-3
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Similar Products

Part Number IXFH12N100 IXFH12N100F   IXFH12N100P   IXFH12N120   IXFH12N100Q   IXFH13N100   IXFH14N100   IXFH15N100   IXFH10N100  
Manufacturer IXYS IXYS IXYS IXYS IXYS IXYS IXYS IXYS IXYS
Product Status Not For New Designs Active Active Active Active Active Obsolete Obsolete Not For New Designs
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V 1000 V 1000 V 1200 V 1000 V 1000 V 1000 V 1000 V 1000 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc) 12A (Tc) 12A (Tc) 12A (Tc) 12A (Tc) 12.5A (Tc) 14A (Tc) 15A (Tc) 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 1.05Ohm @ 6A, 10V 1.05Ohm @ 6A, 10V 1.05Ohm @ 6A, 10V 1.4Ohm @ 500mA, 10V 1.05Ohm @ 6A, 10V 900mOhm @ 500mA, 10V 750mOhm @ 500mA, 10V 700mOhm @ 500mA, 10V 1.2Ohm @ 5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 4mA 5.5V @ 4mA 5V @ 1mA 5V @ 4mA 5.5V @ 4mA 4.5V @ 4mA 4.5V @ 4mA 4.5V @ 4mA 4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 155 nC @ 10 V 77 nC @ 10 V 80 nC @ 10 V 95 nC @ 10 V 90 nC @ 10 V 155 nC @ 10 V 220 nC @ 10 V 220 nC @ 10 V 155 nC @ 10 V
Vgs (Max) ±20V ±20V ±30V ±30V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4000 pF @ 25 V 2700 pF @ 25 V 4080 pF @ 25 V 3400 pF @ 25 V 2900 pF @ 25 V 4000 pF @ 25 V 4500 pF @ 25 V 4500 pF @ 25 V 4000 pF @ 25 V
FET Feature - - - - - - - - -
Power Dissipation (Max) 300W (Tc) 300W (Tc) 463W (Tc) 500W (Tc) 300W (Tc) 300W (Tc) 360W (Tc) 360W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-247AD (IXFH) TO-247AD (IXFH) TO-247AD (IXFH) TO-247AD (IXFH) TO-247AD (IXFH) TO-247AD (IXFH) TO-247AD (IXFH) TO-247AD (IXFH) TO-247AD (IXFH)
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3

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