IXFH120N30X3
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IXYS IXFH120N30X3

Manufacturer No:
IXFH120N30X3
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFH120N30X3 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 300V 120A TO247
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):300 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:11mOhm @ 60A, 10V
Vgs(th) (Max) @ Id:4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs:170 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1376 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):735W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247 (IXTH)
Package / Case:TO-247-3
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Similar Products

Part Number IXFH120N30X3 IXFH150N30X3   IXFH100N30X3  
Manufacturer IXYS IXYS IXYS
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 300 V 300 V 300 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc) 150A (Tc) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 11mOhm @ 60A, 10V 8.3mOhm @ 75A, 10V 13.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4.5V @ 4mA 4.5V @ 4mA 4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 170 nC @ 10 V 177 nC @ 10 V 122 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1376 pF @ 25 V 13100 pF @ 25 V 7660 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 735W (Tc) 890W (Tc) 480W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-247 (IXTH) TO-247 (IXTH) TO-247 (IXTH)
Package / Case TO-247-3 TO-247-3 TO-247-3

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