IXFH120N25T
  • Share:

IXYS IXFH120N25T

Manufacturer No:
IXFH120N25T
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFH120N25T Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 250V 120A TO247AD
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):250 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:23mOhm @ 60A, 10V
Vgs(th) (Max) @ Id:5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs:180 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:11300 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):890W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247AD (IXFH)
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

$12.68
40

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXFH120N25T IXFH110N25T  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V 250 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc) 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 23mOhm @ 60A, 10V 24mOhm @ 55A, 10V
Vgs(th) (Max) @ Id 5V @ 4mA 4.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs 180 nC @ 10 V 157 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 11300 pF @ 25 V 9400 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 890W (Tc) 694W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247AD (IXFH) TO-247AD (IXFH)
Package / Case TO-247-3 TO-247-3

Related Product By Categories

2SJ687-ZK-E1-AY
2SJ687-ZK-E1-AY
Renesas Electronics America Inc
MOSFET P-CH 20V 20A TO252
FQPF11P06
FQPF11P06
onsemi
MOSFET P-CH 60V 8.6A TO220F
IPA60R170CFD7XKSA1
IPA60R170CFD7XKSA1
Infineon Technologies
MOSFET N-CH 650V 8A TO220
CSD18536KTTT
CSD18536KTTT
Texas Instruments
MOSFET N-CH 60V 200A/349A DDPAK
DMN4035L-7
DMN4035L-7
Diodes Incorporated
MOSFET N-CH 40V 4.6A SOT23
NVMFS5C677NLWFT1G
NVMFS5C677NLWFT1G
onsemi
MOSFET N-CH 60V 11A/36A 5DFN
BSS84P E6433
BSS84P E6433
Infineon Technologies
MOSFET P-CH 60V 170MA SOT23-3
2SK2883(TE24L,Q)
2SK2883(TE24L,Q)
Toshiba Semiconductor and Storage
MOSFET N-CH 800V 3A TO220SM
NTMFS4939NT3G
NTMFS4939NT3G
onsemi
MOSFET N-CH 30V 9.3A/53A 5DFN
IPL65R660E6AUMA1
IPL65R660E6AUMA1
Infineon Technologies
MOSFET N-CH 650V 7A THIN-PAK
SFT1341-TL-E
SFT1341-TL-E
onsemi
MOSFET P-CH 40V 10A DPAK/TP-FA
RSR030N06HZGTL
RSR030N06HZGTL
Rohm Semiconductor
MOSFET N-CH 60V 3A TSMT3

Related Product By Brand

FBE22-06N1
FBE22-06N1
IXYS
BRIDGE RECT 1P 600V 20A I4-PAC
DMA10P1200UZ-TRL
DMA10P1200UZ-TRL
IXYS
POWER DIODE DISCRETES-RECTIFIER
VHF28-08IO5
VHF28-08IO5
IXYS
RECT BRIDGE 1PH 800V FO-F-A
IXTT30N60P
IXTT30N60P
IXYS
MOSFET N-CH 600V 30A TO268
IXTH180N085T
IXTH180N085T
IXYS
MOSFET N-CH 85V 180A TO247
IXFH30N50
IXFH30N50
IXYS
MOSFET N-CH 500V 30A TO247AD
IXTA62N25T
IXTA62N25T
IXYS
MOSFET N-CH 250V 62A TO263
IXFK260N17T
IXFK260N17T
IXYS
MOSFET N-CH 170V 260A TO264AA
IXFP7N60P3
IXFP7N60P3
IXYS
MOSFET N-CH 600V 7A TO220AB
IXGN72N60C3H1
IXGN72N60C3H1
IXYS
IGBT MOD 600V 78A 360W SOT227B
MMIX1X200N60B3H1
MMIX1X200N60B3H1
IXYS
IGBT 600V 175A 520W SMPD
IXGT24N170A
IXGT24N170A
IXYS
IGBT 1700V 24A 250W TO268