IXFC36N50P
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IXYS IXFC36N50P

Manufacturer No:
IXFC36N50P
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFC36N50P Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 500V 19A ISOPLUS220
Delivery:
Payment:
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iso45001
iso9001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:19A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:190mOhm @ 18A, 10V
Vgs(th) (Max) @ Id:5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs:93 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:5500 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):156W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:ISOPLUS220™
Package / Case:ISOPLUS220™
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Similar Products

Part Number IXFC36N50P IXFC16N50P   IXFC26N50P  
Manufacturer IXYS IXYS IXYS
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 19A (Tc) 10A (Tc) 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 190mOhm @ 18A, 10V 450mOhm @ 8A, 10V 260mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 5V @ 4mA 5.5V @ 2.5mA 5.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 93 nC @ 10 V 43 nC @ 10 V 65 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 5500 pF @ 25 V 2250 pF @ 25 V 3600 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 156W (Tc) 125W (Tc) 130W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package ISOPLUS220™ ISOPLUS220™ ISOPLUS220™
Package / Case ISOPLUS220™ ISOPLUS220™ ISOPLUS220™

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