IXFC20N80P
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IXYS IXFC20N80P

Manufacturer No:
IXFC20N80P
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFC20N80P Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 800V 11A ISOPLUS220
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:11A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:500mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs:85 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:4680 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):166W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:ISOPLUS220™
Package / Case:ISOPLUS220™
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Similar Products

Part Number IXFC20N80P IXFC10N80P  
Manufacturer IXYS IXYS
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc) 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V -
Rds On (Max) @ Id, Vgs 500mOhm @ 10A, 10V -
Vgs(th) (Max) @ Id 5V @ 4mA -
Gate Charge (Qg) (Max) @ Vgs 85 nC @ 10 V -
Vgs (Max) ±30V -
Input Capacitance (Ciss) (Max) @ Vds 4680 pF @ 25 V -
FET Feature - -
Power Dissipation (Max) 166W (Tc) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Through Hole Through Hole
Supplier Device Package ISOPLUS220™ ISOPLUS220™
Package / Case ISOPLUS220™ ISOPLUS220™

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