IXFC16N80P
  • Share:

IXYS IXFC16N80P

Manufacturer No:
IXFC16N80P
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFC16N80P Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 800V 9A ISOPLUS220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:650mOhm @ 8A, 10V
Vgs(th) (Max) @ Id:5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs:71 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:4600 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):150W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:ISOPLUS220™
Package / Case:ISOPLUS220™
0 Remaining View Similar

In Stock

-
274

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXFC16N80P IXFH16N80P   IXFC10N80P   IXFC12N80P   IXFC14N80P   IXFC16N50P  
Manufacturer IXYS IXYS IXYS IXYS IXYS IXYS
Product Status Obsolete Active Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V 800 V 800 V 800 V 500 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc) 16A (Tc) 5A (Tc) 7A (Tc) 8A (Tc) 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V - 10V 10V 10V
Rds On (Max) @ Id, Vgs 650mOhm @ 8A, 10V 600mOhm @ 500mA, 10V - 930mOhm @ 6A, 10V 770mOhm @ 7A, 10V 450mOhm @ 8A, 10V
Vgs(th) (Max) @ Id 5V @ 4mA 5V @ 4mA - 5.5V @ 2.5mA 5.5V @ 4mA 5.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs 71 nC @ 10 V 71 nC @ 10 V - 51 nC @ 10 V 61 nC @ 10 V 43 nC @ 10 V
Vgs (Max) ±30V ±30V - ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 4600 pF @ 25 V 4600 pF @ 25 V - 2800 pF @ 25 V 3900 pF @ 25 V 2250 pF @ 25 V
FET Feature - - - - - -
Power Dissipation (Max) 150W (Tc) 460W (Tc) - 120W (Tc) 130W (Tc) 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package ISOPLUS220™ TO-247AD (IXFH) ISOPLUS220™ ISOPLUS220™ ISOPLUS220™ ISOPLUS220™
Package / Case ISOPLUS220™ TO-247-3 ISOPLUS220™ ISOPLUS220™ ISOPLUS220™ ISOPLUS220™

Related Product By Categories

SIHP10N40D-GE3
SIHP10N40D-GE3
Vishay Siliconix
MOSFET N-CH 400V 10A TO220AB
PMV130ENEAR
PMV130ENEAR
Nexperia USA Inc.
MOSFET N-CH 40V 2.1A TO236AB
SUD40N08-16-E3
SUD40N08-16-E3
Vishay Siliconix
MOSFET N-CH 80V 40A TO252
IRFS3004TRLPBF
IRFS3004TRLPBF
Infineon Technologies
MOSFET N-CH 40V 195A D2PAK
IPB80N04S2H4-ATMA2
IPB80N04S2H4-ATMA2
Infineon Technologies
N-CHANNEL POWER MOSFET
NVMFS5C646NLWFAFT3G
NVMFS5C646NLWFAFT3G
onsemi
MOSFET N-CH 60V 20A/93A 5DFN
IRFS33N15D
IRFS33N15D
Infineon Technologies
MOSFET N-CH 150V 33A D2PAK
94-3250
94-3250
Infineon Technologies
MOSFET N-CH 30V 12A DIRECTFET
HUF76429D3S
HUF76429D3S
onsemi
MOSFET N-CH 60V 20A TO252AA
PH4030AL,115
PH4030AL,115
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56
PHD82NQ03LT,118
PHD82NQ03LT,118
NXP USA Inc.
MOSFET N-CH 30V 75A DPAK
R6515KNXC7G
R6515KNXC7G
Rohm Semiconductor
650V 15A TO-220FM, HIGH-SPEED SW

Related Product By Brand

MCD72-16IO1B
MCD72-16IO1B
IXYS
MOD THYRISTOR/DIO 1600V TO-240AA
CS45-12IO1
CS45-12IO1
IXYS
SCR 1.2KV 75A PLUS247-3
IXFN400N15X3
IXFN400N15X3
IXYS
MOSFET N-CH 150V 400A SOT227B
IXFT24N90P
IXFT24N90P
IXYS
MOSFET N-CH 900V 24A TO268
IXTP230N04T4
IXTP230N04T4
IXYS
MOSFET N-CH 40V 230A TO220AB
IXFH80N08
IXFH80N08
IXYS
MOSFET N-CH 80V 80A TO247AD
IXFR70N15
IXFR70N15
IXYS
MOSFET N-CH 150V 67A ISOPLUS247
IXTP24N15T
IXTP24N15T
IXYS
MOSFET N-CH 150V 24A TO220AB
IXGM40N60A
IXGM40N60A
IXYS
IGBT MODULE 600V 75A 250W TO204
IXGT6N170
IXGT6N170
IXYS
IGBT 1700V 12A 75W TO268
IXGA12N120A2
IXGA12N120A2
IXYS
IGBT 1200V 24A 75W TO263
IXGH20N60AU1
IXGH20N60AU1
IXYS
IGBT 600V 40A 150W TO247AD