IXFC14N60P
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IXYS IXFC14N60P

Manufacturer No:
IXFC14N60P
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFC14N60P Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 8A ISOPLUS220
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:630mOhm @ 7A, 10V
Vgs(th) (Max) @ Id:5.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs:36 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2500 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):125W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:ISOPLUS220™
Package / Case:ISOPLUS220™
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Similar Products

Part Number IXFC14N60P IXFH14N60P   IXFC14N80P  
Manufacturer IXYS IXYS IXYS
Product Status Obsolete Active Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 800 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc) 14A (Tc) 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 630mOhm @ 7A, 10V 550mOhm @ 7A, 10V 770mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 5.5V @ 2.5mA 5.5V @ 2.5mA 5.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 36 nC @ 10 V 36 nC @ 10 V 61 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 2500 pF @ 25 V 2500 pF @ 25 V 3900 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 125W (Tc) 300W (Tc) 130W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package ISOPLUS220™ TO-247AD (IXFH) ISOPLUS220™
Package / Case ISOPLUS220™ TO-247-3 ISOPLUS220™

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