IXFC110N10P
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IXYS IXFC110N10P

Manufacturer No:
IXFC110N10P
Manufacturer:
IXYS
Package:
Box
Datasheet:
IXFC110N10P Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 60A ISOPLUS220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:17mOhm @ 55A, 10V
Vgs(th) (Max) @ Id:5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs:110 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3550 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):120W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:ISOPLUS220™
Package / Case:ISOPLUS220™
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Similar Products

Part Number IXFC110N10P IXFH110N10P  
Manufacturer IXYS IXYS
Product Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc) 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 17mOhm @ 55A, 10V 15mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 5V @ 4mA 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V 110 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3550 pF @ 25 V 3550 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 120W (Tc) 480W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package ISOPLUS220™ TO-247AD (IXFH)
Package / Case ISOPLUS220™ TO-247-3

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