IXYS-IXFB110N60P3 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	600 V
Current - Continuous Drain (Id) @ 25°C:	110A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	56mOhm @ 55A, 10V
Vgs(th) (Max) @ Id:	5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs:	245 nC @ 10 V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	18000 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	1890W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	PLUS264™
Package / Case:	TO-264-3, TO-264AA

IXYS IXFB110N60P3