IXFA4N100P
  • Share:

IXYS IXFA4N100P

Manufacturer No:
IXFA4N100P
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFA4N100P Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 1000V 4A TO263
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.3Ohm @ 2A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:26 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1456 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):150W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-263 (IXFA)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

$4.13
86

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXFA4N100P IXFA4N100Q   IXFA5N100P   IXFA7N100P  
Manufacturer IXYS IXYS IXYS IXYS
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V 1000 V 1000 V 1000 V
Current - Continuous Drain (Id) @ 25°C 4A (Tc) 4A (Tc) 5A (Tc) 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 3.3Ohm @ 2A, 10V 3Ohm @ 2A, 10V 2.8Ohm @ 2.5A, 10V 1.9Ohm @ 3.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 4.5V @ 1.5mA 6V @ 250µA 6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 26 nC @ 10 V 39 nC @ 10 V 33.4 nC @ 10 V 47 nC @ 10 V
Vgs (Max) ±20V ±20V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1456 pF @ 25 V 1050 pF @ 25 V 1830 pF @ 25 V 2590 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 150W (Tc) 150W (Tc) 250W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package TO-263 (IXFA) TO-263 (IXFA) TO-263AA (IXFA) TO-263 (IXFA)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

UF3C065040K4S
UF3C065040K4S
UnitedSiC
MOSFET N-CH 650V 54A TO247-4
IRFS820B
IRFS820B
Fairchild Semiconductor
N-CHANNEL POWER MOSFET
PHB33NQ20T,118
PHB33NQ20T,118
Nexperia USA Inc.
MOSFET N-CH 200V 32.7A D2PAK
IXFT120N30X3HV
IXFT120N30X3HV
IXYS
MOSFET N-CH 300V 120A TO268HV
PJL9480_R2_00001
PJL9480_R2_00001
Panjit International Inc.
150V N-CHANNEL ENHANCEMENT MODE
DMP2900UT-7
DMP2900UT-7
Diodes Incorporated
MOSFET BVDSS: 8V~24V SOT523 T&R
BUK6D43-40PX
BUK6D43-40PX
Nexperia USA Inc.
MOSFET P-CH 40V 6A DFN2020MD-6
IPD033N06NATMA1
IPD033N06NATMA1
Infineon Technologies
MOSFET N-CH 60V 90A TO252-3
IRL620
IRL620
Vishay Siliconix
MOSFET N-CH 200V 5.2A TO220AB
IPI80N04S204AKSA1
IPI80N04S204AKSA1
Infineon Technologies
MOSFET N-CH 40V 80A TO262-3
IPP60R520E6XKSA1
IPP60R520E6XKSA1
Infineon Technologies
MOSFET N-CH 600V 8.1A TO220-3
SUA70090E-E3
SUA70090E-E3
Vishay Siliconix
MOSFET N-CH 100V 42.8A TO220

Related Product By Brand

VBO160-16NO7
VBO160-16NO7
IXYS
BRIDGE RECT 1P 1.6KV 174A PWS-E
DSA70C100HB
DSA70C100HB
IXYS
DIODE ARRAY SCHOTTKY 100V TO247
DSEP15-12CR
DSEP15-12CR
IXYS
DIODE GP 1.2KV 15A ISOPLUS247
IXFN56N90P
IXFN56N90P
IXYS
MOSFET N-CH 900V 56A SOT-227B
IXTA3N110
IXTA3N110
IXYS
MOSFET N-CH 1100V 3A TO263
IXTP152N085T
IXTP152N085T
IXYS
MOSFET N-CH 85V 152A TO220AB
IXTU08N100P
IXTU08N100P
IXYS
MOSFET N-CH 1000V 8A TO251
IXTV60N30T
IXTV60N30T
IXYS
MOSFET N-CH 300V 60A PLUS220
IXTV96N25T
IXTV96N25T
IXYS
MOSFET N-CH 250V 96A PLUS220
IXSH15N120B
IXSH15N120B
IXYS
IGBT 1200V 30A 150W TO247
IXGH42N30C3
IXGH42N30C3
IXYS
IGBT 300V 223W TO247
IXGT30N60B
IXGT30N60B
IXYS
IGBT 600V 60A 200W TO268