IXYS-IXDP20N60B - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	NPT
Voltage - Collector Emitter Breakdown (Max):	600 V
Current - Collector (Ic) (Max):	32 A
Current - Collector Pulsed (Icm):	40 A
Vce(on) (Max) @ Vge, Ic:	2.8V @ 15V, 20A
Power - Max:	140 W
Switching Energy:	900µJ (on), 400µJ (off)
Input Type:	Standard
Gate Charge:	70 nC
Td (on/off) @ 25°C:	-
Test Condition:	300V, 20A, 22Ohm, 15V
Reverse Recovery Time (trr):	-
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3
Supplier Device Package:	TO-220-3

IXYS IXDP20N60B