IXDN609SI
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IXYS Integrated Circuits Division IXDN609SI

Manufacturer No:
IXDN609SI
Manufacturer:
IXYS Integrated Circuits Division
Package:
Tube
Datasheet:
IXDN609SI Datasheet
ECAD Model:
-
Description:
IC GATE DRVR LOW-SIDE 8SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Driven Configuration:Low-Side
Channel Type:Single
Number of Drivers:1
Gate Type:IGBT, N-Channel, P-Channel MOSFET
Voltage - Supply:4.5V ~ 35V
Logic Voltage - VIL, VIH:0.8V, 3V
Current - Peak Output (Source, Sink):9A, 9A
Input Type:Non-Inverting
High Side Voltage - Max (Bootstrap):- 
Rise / Fall Time (Typ):22ns, 15ns
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width) Exposed Pad
Supplier Device Package:8-SOIC-EP
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Similar Products

Part Number IXDN609SI IXDN609YI   IXDN609SIA   IXDI609SI   IXDN409SI   IXDN602SI   IXDN604SI   IXDN609CI   IXDN609PI  
Manufacturer IXYS Integrated Circuits Division IXYS Integrated Circuits Division IXYS Integrated Circuits Division IXYS Integrated Circuits Division IXYS IXYS Integrated Circuits Division IXYS Integrated Circuits Division IXYS Integrated Circuits Division IXYS Integrated Circuits Division
Product Status Active Active Active Active Obsolete Active Active Active Active
Driven Configuration Low-Side Low-Side Low-Side Low-Side Low-Side Low-Side Low-Side Low-Side Low-Side
Channel Type Single Single Single Single Single Independent Independent Single Single
Number of Drivers 1 1 1 1 1 2 2 1 1
Gate Type IGBT, N-Channel, P-Channel MOSFET IGBT, N-Channel, P-Channel MOSFET IGBT, N-Channel, P-Channel MOSFET IGBT, N-Channel, P-Channel MOSFET IGBT, N-Channel, P-Channel MOSFET IGBT, N-Channel, P-Channel MOSFET IGBT, N-Channel, P-Channel MOSFET IGBT, N-Channel, P-Channel MOSFET IGBT, N-Channel, P-Channel MOSFET
Voltage - Supply 4.5V ~ 35V 4.5V ~ 35V 4.5V ~ 35V 4.5V ~ 35V 4.5V ~ 35V 4.5V ~ 35V 4.5V ~ 35V 4.5V ~ 35V 4.5V ~ 35V
Logic Voltage - VIL, VIH 0.8V, 3V 0.8V, 3V 0.8V, 3V 0.8V, 3V 0.8V, 3.5V 0.8V, 3V 0.8V, 3V 0.8V, 3V 0.8V, 3V
Current - Peak Output (Source, Sink) 9A, 9A 9A, 9A 9A, 9A 9A, 9A 9A, 9A 2A, 2A 4A, 4A 9A, 9A 9A, 9A
Input Type Non-Inverting Non-Inverting Non-Inverting Inverting Non-Inverting Non-Inverting Non-Inverting Non-Inverting Non-Inverting
High Side Voltage - Max (Bootstrap) - - - - - - - - -
Rise / Fall Time (Typ) 22ns, 15ns 22ns, 15ns 22ns, 15ns 22ns, 15ns 10ns, 10ns 7.5ns, 6.5ns 9ns, 8ns 22ns, 15ns 22ns, 15ns
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -40°C ~ 125°C (TA) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Through Hole Through Hole
Package / Case 8-SOIC (0.154", 3.90mm Width) Exposed Pad TO-263-6, D²Pak (5 Leads + Tab), TO-263BA 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) Exposed Pad 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) Exposed Pad 8-SOIC (0.154", 3.90mm Width) Exposed Pad TO-220-5 8-DIP (0.300", 7.62mm)
Supplier Device Package 8-SOIC-EP TO-263-5 8-SOIC 8-SOIC-EP 8-SOIC 8-SOIC-EP 8-SOIC-EP TO-220-5 8-DIP

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