IXDI602PI
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IXYS Integrated Circuits Division IXDI602PI

Manufacturer No:
IXDI602PI
Manufacturer:
IXYS Integrated Circuits Division
Package:
Tube
Datasheet:
IXDI602PI Datasheet
ECAD Model:
-
Description:
IC GATE DRVR LOW-SIDE 8DIP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Driven Configuration:Low-Side
Channel Type:Independent
Number of Drivers:2
Gate Type:IGBT, N-Channel, P-Channel MOSFET
Voltage - Supply:4.5V ~ 35V
Logic Voltage - VIL, VIH:0.8V, 3V
Current - Peak Output (Source, Sink):2A, 2A
Input Type:Inverting
High Side Voltage - Max (Bootstrap):- 
Rise / Fall Time (Typ):7.5ns, 6.5ns
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:8-DIP (0.300", 7.62mm)
Supplier Device Package:8-DIP
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$1.67
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Similar Products

Part Number IXDI602PI IXDN602PI   IXDI609PI   IXDI604PI   IXDI602SI   IXDF602PI   IXDI402PI   IXDI502PI  
Manufacturer IXYS Integrated Circuits Division IXYS Integrated Circuits Division IXYS Integrated Circuits Division IXYS Integrated Circuits Division IXYS Integrated Circuits Division IXYS Integrated Circuits Division IXYS IXYS
Product Status Active Active Active Active Active Active Obsolete Obsolete
Driven Configuration Low-Side Low-Side Low-Side Low-Side Low-Side Low-Side Low-Side Low-Side
Channel Type Independent Independent Single Independent Independent Independent Independent Independent
Number of Drivers 2 2 1 2 2 2 2 2
Gate Type IGBT, N-Channel, P-Channel MOSFET IGBT, N-Channel, P-Channel MOSFET IGBT, N-Channel, P-Channel MOSFET IGBT, N-Channel, P-Channel MOSFET IGBT, N-Channel, P-Channel MOSFET IGBT, N-Channel, P-Channel MOSFET IGBT, N-Channel, P-Channel MOSFET IGBT, N-Channel, P-Channel MOSFET
Voltage - Supply 4.5V ~ 35V 4.5V ~ 35V 4.5V ~ 35V 4.5V ~ 35V 4.5V ~ 35V 4.5V ~ 35V 4.5V ~ 35V 4.5V ~ 30V
Logic Voltage - VIL, VIH 0.8V, 3V 0.8V, 3V 0.8V, 3V 0.8V, 3V 0.8V, 3V 0.8V, 3V 0.8V, 3V 0.8V, 3V
Current - Peak Output (Source, Sink) 2A, 2A 2A, 2A 9A, 9A 4A, 4A 2A, 2A 2A, 2A 2A, 2A 2A, 2A
Input Type Inverting Non-Inverting Inverting Inverting Inverting Inverting, Non-Inverting Inverting Inverting
High Side Voltage - Max (Bootstrap) - - - - - - - -
Rise / Fall Time (Typ) 7.5ns, 6.5ns 7.5ns, 6.5ns 22ns, 15ns 9ns, 8ns 7.5ns, 6.5ns 7.5ns, 6.5ns 8ns, 8ns 7.5ns, 6.5ns
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -40°C ~ 125°C (TA) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Surface Mount Through Hole Through Hole Through Hole
Package / Case 8-DIP (0.300", 7.62mm) 8-DIP (0.300", 7.62mm) 8-DIP (0.300", 7.62mm) 8-DIP (0.300", 7.62mm) 8-SOIC (0.154", 3.90mm Width) Exposed Pad 8-DIP (0.300", 7.62mm) 8-DIP (0.300", 7.62mm) 8-DIP (0.300", 7.62mm)
Supplier Device Package 8-DIP 8-DIP 8-DIP 8-DIP 8-SOIC-EP 8-DIP 8-DIP 8-DIP

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