IXDE509SIAT/R
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IXYS IXDE509SIAT/R

Manufacturer No:
IXDE509SIAT/R
Manufacturer:
IXYS
Package:
Tape & Reel (TR)
Datasheet:
IXDE509SIAT/R Datasheet
ECAD Model:
-
Description:
IC GATE DRVR LOW-SIDE 8SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Driven Configuration:Low-Side
Channel Type:Single
Number of Drivers:1
Gate Type:IGBT, N-Channel, P-Channel MOSFET
Voltage - Supply:4.5V ~ 30V
Logic Voltage - VIL, VIH:0.8V, 2.4V
Current - Peak Output (Source, Sink):9A, 9A
Input Type:Inverting
High Side Voltage - Max (Bootstrap):- 
Rise / Fall Time (Typ):25ns, 23ns
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SOIC
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In Stock

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Similar Products

Part Number IXDE509SIAT/R IXDI509SIAT/R   IXDD509SIAT/R   IXDE504SIAT/R  
Manufacturer IXYS IXYS IXYS IXYS
Product Status Obsolete Obsolete Obsolete Obsolete
Driven Configuration Low-Side Low-Side Low-Side Low-Side
Channel Type Single Single Single Independent
Number of Drivers 1 1 1 2
Gate Type IGBT, N-Channel, P-Channel MOSFET IGBT, N-Channel, P-Channel MOSFET IGBT, N-Channel, P-Channel MOSFET IGBT, N-Channel, P-Channel MOSFET
Voltage - Supply 4.5V ~ 30V 4.5V ~ 30V 4.5V ~ 30V 4.5V ~ 30V
Logic Voltage - VIL, VIH 0.8V, 2.4V 0.8V, 2.4V 0.8V, 2.4V 0.8V, 3V
Current - Peak Output (Source, Sink) 9A, 9A 9A, 9A 9A, 9A 4A, 4A
Input Type Inverting Inverting Non-Inverting Inverting
High Side Voltage - Max (Bootstrap) - - - -
Rise / Fall Time (Typ) 25ns, 23ns 25ns, 23ns 25ns, 23ns 9ns, 8ns
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC 8-SOIC 8-SOIC 8-SOIC

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