IXDD614CI
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IXYS Integrated Circuits Division IXDD614CI

Manufacturer No:
IXDD614CI
Manufacturer:
IXYS Integrated Circuits Division
Package:
Tube
Datasheet:
IXDD614CI Datasheet
ECAD Model:
-
Description:
IC GATE DRVR LOW-SIDE TO220-5
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Driven Configuration:Low-Side
Channel Type:Single
Number of Drivers:1
Gate Type:IGBT, N-Channel, P-Channel MOSFET
Voltage - Supply:4.5V ~ 35V
Logic Voltage - VIL, VIH:0.8V, 3V
Current - Peak Output (Source, Sink):14A, 14A
Input Type:Non-Inverting
High Side Voltage - Max (Bootstrap):- 
Rise / Fall Time (Typ):25ns, 18ns
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-5
Supplier Device Package:TO-220-5
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Similar Products

Part Number IXDD614CI IXDD614SI   IXDD614PI   IXDI614CI  
Manufacturer IXYS Integrated Circuits Division IXYS Integrated Circuits Division IXYS Integrated Circuits Division IXYS Integrated Circuits Division
Product Status Active Active Active Active
Driven Configuration Low-Side Low-Side Low-Side Low-Side
Channel Type Single Single Single Single
Number of Drivers 1 1 1 1
Gate Type IGBT, N-Channel, P-Channel MOSFET IGBT, N-Channel, P-Channel MOSFET IGBT, N-Channel, P-Channel MOSFET IGBT, N-Channel, P-Channel MOSFET
Voltage - Supply 4.5V ~ 35V 4.5V ~ 35V 4.5V ~ 35V 4.5V ~ 35V
Logic Voltage - VIL, VIH 0.8V, 3V 0.8V, 3V 0.8V, 3V 0.8V, 3V
Current - Peak Output (Source, Sink) 14A, 14A 14A, 14A 14A, 14A 14A, 14A
Input Type Non-Inverting Non-Inverting Non-Inverting Inverting
High Side Voltage - Max (Bootstrap) - - - -
Rise / Fall Time (Typ) 25ns, 18ns 25ns, 18ns 25ns, 18ns 25ns, 18ns
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Surface Mount Through Hole Through Hole
Package / Case TO-220-5 8-SOIC (0.154", 3.90mm Width) Exposed Pad 8-DIP (0.300", 7.62mm) TO-220-5 Formed Leads
Supplier Device Package TO-220-5 8-SOIC-EP 8-DIP TO-220-5

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