IXDD430MYI
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IXYS IXDD430MYI

Manufacturer No:
IXDD430MYI
Manufacturer:
IXYS
Package:
Bulk
Datasheet:
IXDD430MYI Datasheet
ECAD Model:
-
Description:
IC GATE DRVR LOW-SIDE TO263
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Driven Configuration:Low-Side
Channel Type:Single
Number of Drivers:1
Gate Type:IGBT, N-Channel, P-Channel MOSFET
Voltage - Supply:8.5V ~ 35V
Logic Voltage - VIL, VIH:0.8V, 3.5V
Current - Peak Output (Source, Sink):30A, 30A
Input Type:Non-Inverting
High Side Voltage - Max (Bootstrap):- 
Rise / Fall Time (Typ):18ns, 16ns
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-263-6, D²Pak (5 Leads + Tab), TO-263BA
Supplier Device Package:TO-263-5
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Similar Products

Part Number IXDD430MYI IXDD630MYI   IXDD430YI   IXDI430MYI  
Manufacturer IXYS IXYS Integrated Circuits Division IXYS IXYS
Product Status Obsolete Active Obsolete Obsolete
Driven Configuration Low-Side Low-Side Low-Side Low-Side
Channel Type Single Single Single Single
Number of Drivers 1 1 1 1
Gate Type IGBT, N-Channel, P-Channel MOSFET IGBT, N-Channel, P-Channel MOSFET IGBT, N-Channel, P-Channel MOSFET IGBT, N-Channel, P-Channel MOSFET
Voltage - Supply 8.5V ~ 35V 9V ~ 35V 8.5V ~ 35V 8.5V ~ 35V
Logic Voltage - VIL, VIH 0.8V, 3.5V 0.8V, 3.5V 0.8V, 3.5V 0.8V, 3.5V
Current - Peak Output (Source, Sink) 30A, 30A 30A, 30A 30A, 30A 30A, 30A
Input Type Non-Inverting Non-Inverting Non-Inverting Inverting
High Side Voltage - Max (Bootstrap) - - - -
Rise / Fall Time (Typ) 18ns, 16ns 11ns, 11ns 18ns, 16ns 18ns, 16ns
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-263-6, D²Pak (5 Leads + Tab), TO-263BA TO-263-6, D²Pak (5 Leads + Tab), TO-263BA TO-263-6, D²Pak (5 Leads + Tab), TO-263BA TO-263-6, D²Pak (5 Leads + Tab), TO-263BA
Supplier Device Package TO-263-5 TO-263-5 TO-263-5 TO-263-5

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