IXYS-IXDA20N120AS - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	NPT
Voltage - Collector Emitter Breakdown (Max):	1200 V
Current - Collector (Ic) (Max):	38 A
Current - Collector Pulsed (Icm):	-
Vce(on) (Max) @ Vge, Ic:	3V @ 15V, 20A
Power - Max:	200 W
Switching Energy:	3.1mJ (on), 2.4mJ (off)
Input Type:	Standard
Gate Charge:	70 nC
Td (on/off) @ 25°C:	-
Test Condition:	600V, 20A, 82Ohm, 15V
Reverse Recovery Time (trr):	-
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	TO-263AA

IXYS IXDA20N120AS