IXCY01N90E
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IXYS IXCY01N90E

Manufacturer No:
IXCY01N90E
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXCY01N90E Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 900V 250MA TO252
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:250mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:80Ohm @ 50mA, 10V
Vgs(th) (Max) @ Id:5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs:7.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:133 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):40W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number IXCY01N90E IXCP01N90E  
Manufacturer IXYS IXYS
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V 900 V
Current - Continuous Drain (Id) @ 25°C 250mA (Tc) 250mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 80Ohm @ 50mA, 10V 80Ohm @ 50mA, 10V
Vgs(th) (Max) @ Id 5V @ 25µA 5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs 7.5 nC @ 10 V 7.5 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 133 pF @ 25 V 133 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 40W (Tc) 40W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Through Hole
Supplier Device Package TO-252AA TO-220-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-220-3

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