IXCY01N90E
  • Share:

IXYS IXCY01N90E

Manufacturer No:
IXCY01N90E
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXCY01N90E Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 900V 250MA TO252
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:250mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:80Ohm @ 50mA, 10V
Vgs(th) (Max) @ Id:5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs:7.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:133 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):40W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

-
402

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXCY01N90E IXCP01N90E  
Manufacturer IXYS IXYS
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V 900 V
Current - Continuous Drain (Id) @ 25°C 250mA (Tc) 250mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 80Ohm @ 50mA, 10V 80Ohm @ 50mA, 10V
Vgs(th) (Max) @ Id 5V @ 25µA 5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs 7.5 nC @ 10 V 7.5 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 133 pF @ 25 V 133 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 40W (Tc) 40W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Through Hole
Supplier Device Package TO-252AA TO-220-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-220-3

Related Product By Categories

EPC2021
EPC2021
EPC
GANFET N-CH 80V 90A DIE
IRFH5006TRPBF
IRFH5006TRPBF
Infineon Technologies
MOSFET N-CH 60V 21A/100A 8PQFN
IPA80R360P7XKSA1
IPA80R360P7XKSA1
Infineon Technologies
MOSFET N-CHANNEL 800V 13A TO220
RJK1560DPP-M0#T2
RJK1560DPP-M0#T2
Renesas Electronics America Inc
MOSFET N-CH 150V 20A TO220FL
IRF7421D1TRPBF
IRF7421D1TRPBF
Infineon Technologies
MOSFET N-CH 30V 5.8A 8SO
FCPF400N60
FCPF400N60
onsemi
MOSFET N-CH 600V 10A TO220F
TK20N60W5,S1VF
TK20N60W5,S1VF
Toshiba Semiconductor and Storage
MOSFET N-CH 600V 20A TO247
DMT10H025SK3-13
DMT10H025SK3-13
Diodes Incorporated
MOSFET N-CH 100V 41.2A TO252 T&R
IRL3715
IRL3715
Infineon Technologies
MOSFET N-CH 20V 54A TO220AB
IRF640NSPBF
IRF640NSPBF
Infineon Technologies
MOSFET N-CH 200V 18A D2PAK
FQB34P10TM-F085P
FQB34P10TM-F085P
onsemi
MOSFET P-CH 100V 33.5A D2PAK
R6024ENZ1C9
R6024ENZ1C9
Rohm Semiconductor
MOSFET N-CH 600V 24A TO247

Related Product By Brand

VUO34-12NO1
VUO34-12NO1
IXYS
BRIDGE RECT 3P 1.2KV 36A V1-A
DSS16-01AS-TRL
DSS16-01AS-TRL
IXYS
DIODE SCHOTTKY 100V 16A TO263AB
MCC21-14IO8B
MCC21-14IO8B
IXYS
MOD THYRISTOR DUAL 1400V TO240AA
CS23-16IO2
CS23-16IO2
IXYS
SCR 1.6KV 50A TO208AA
IXFP10N60P
IXFP10N60P
IXYS
MOSFET N-CH 600V 10A TO220AB
IXFA72N20X3
IXFA72N20X3
IXYS
MOSFET N-CH 200V 72A TO263AA
IXFH76N15T2
IXFH76N15T2
IXYS
MOSFET N-CH 150V 76A TO247
IXTH96N25T
IXTH96N25T
IXYS
MOSFET N-CH 250V 96A TO247
IXKC15N60C5
IXKC15N60C5
IXYS
MOSFET N-CH 600V 15A ISOPLUS220
IXYA8N250CHV
IXYA8N250CHV
IXYS
IGBT
IXGR40N60B2D1
IXGR40N60B2D1
IXYS
IGBT 600V 60A 167W ISOPLUS247
IXDN404SIA
IXDN404SIA
IXYS
IC GATE DRVR LOW-SIDE 8SOIC