IXYS-IXA55I1200HJ - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	PT
Voltage - Collector Emitter Breakdown (Max):	1200 V
Current - Collector (Ic) (Max):	84 A
Current - Collector Pulsed (Icm):	-
Vce(on) (Max) @ Vge, Ic:	2.1V @ 15V, 50A
Power - Max:	290 W
Switching Energy:	4.5mJ (on), 5.5mJ (off)
Input Type:	Standard
Gate Charge:	190 nC
Td (on/off) @ 25°C:	-
Test Condition:	600V, 50A, 15Ohm, 15V
Reverse Recovery Time (trr):	-
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-247-3
Supplier Device Package:	ISOPLUS247™

IXYS IXA55I1200HJ