IX6R11S3T/R
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IXYS IX6R11S3T/R

Manufacturer No:
IX6R11S3T/R
Manufacturer:
IXYS
Package:
Tape & Reel (TR)
Datasheet:
IX6R11S3T/R Datasheet
ECAD Model:
-
Description:
IC GATE DRVR HALF-BRIDGE 16SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Driven Configuration:Half-Bridge
Channel Type:Independent
Number of Drivers:2
Gate Type:IGBT, N-Channel MOSFET
Voltage - Supply:10V ~ 35V
Logic Voltage - VIL, VIH:6V, 9.6V
Current - Peak Output (Source, Sink):6A, 6A
Input Type:Non-Inverting
High Side Voltage - Max (Bootstrap):600 V
Rise / Fall Time (Typ):25ns, 17ns
Operating Temperature:-40°C ~ 125°C (TA)
Mounting Type:Surface Mount
Package / Case:16-SOIC (0.295", 7.50mm Width)
Supplier Device Package:16-SOIC
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Similar Products

Part Number IX6R11S3T/R IX6R11S6T/R   IX2R11S3T/R   IX4R11S3T/R  
Manufacturer IXYS IXYS IXYS IXYS
Product Status Obsolete Obsolete Obsolete Obsolete
Driven Configuration Half-Bridge Half-Bridge Half-Bridge Half-Bridge
Channel Type Independent Independent Independent Independent
Number of Drivers 2 2 2 2
Gate Type IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET
Voltage - Supply 10V ~ 35V 10V ~ 35V 10V ~ 35V 10V ~ 35V
Logic Voltage - VIL, VIH 6V, 9.6V 6V, 9.6V 6V, 9.6V 6V, 7V
Current - Peak Output (Source, Sink) 6A, 6A 6A, 6A 2A, 2A 4A, 4A
Input Type Non-Inverting Non-Inverting Non-Inverting Non-Inverting
High Side Voltage - Max (Bootstrap) 600 V 600 V 500 V 650 V
Rise / Fall Time (Typ) 25ns, 17ns 25ns, 17ns 8ns, 7ns 23ns, 22ns
Operating Temperature -40°C ~ 125°C (TA) -40°C ~ 125°C (TA) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 16-SOIC (0.295", 7.50mm Width) 18-SOIC (0.295", 7.50mm Width) 16-SOIC (0.295", 7.50mm Width) 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package 16-SOIC 18-SOIC 16-SOIC 16-SOIC

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