IRFP470
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IXYS IRFP470

Manufacturer No:
IRFP470
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IRFP470 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 500V 24A TO247AD
Delivery:
Payment:
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iso45001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:24A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:230mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:190 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4200 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247AD
Package / Case:TO-247-3
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Similar Products

Part Number IRFP470 IRFP440   IRFP450   IRFP460  
Manufacturer IXYS Harris Corporation Vishay Siliconix Vishay Siliconix
Product Status Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 24A (Tc) 8.8A (Tc) 14A (Tc) 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 230mOhm @ 12A, 10V 850mOhm @ 5.3A, 10V 400mOhm @ 8.4A, 10V 270mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 190 nC @ 10 V 63 nC @ 10 V 150 nC @ 10 V 210 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4200 pF @ 25 V 1300 pF @ 25 V 2600 pF @ 25 V 4200 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 300W (Tc) 150W (Tc) 190W (Tc) 280W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-247AD TO-247AC TO-247AC TO-247AC
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3

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