IRFP260
  • Share:

IXYS IRFP260

Manufacturer No:
IRFP260
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IRFP260 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 200V 46A TO247AD
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:46A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:55mOhm @ 28A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:230 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3900 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):280W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247 (IXTH)
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

-
72

Please send RFQ , we will respond immediately.

Similar Products

Part Number IRFP260 IRFP264   IRFP360   IRFP460   IRFP240   IRFP250  
Manufacturer IXYS Vishay Siliconix Vishay Siliconix Vishay Siliconix Vishay Siliconix STMicroelectronics
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 250 V 400 V 500 V 200 V 200 V
Current - Continuous Drain (Id) @ 25°C 46A (Tc) 38A (Tc) 23A (Tc) 20A (Tc) 20A (Tc) 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 55mOhm @ 28A, 10V 75mOhm @ 23A, 10V 200mOhm @ 14A, 10V 270mOhm @ 12A, 10V 180mOhm @ 12A, 10V 85mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 230 nC @ 10 V 210 nC @ 10 V 210 nC @ 10 V 210 nC @ 10 V 70 nC @ 10 V 158 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3900 pF @ 25 V 5400 pF @ 25 V 4500 pF @ 25 V 4200 pF @ 25 V 1300 pF @ 25 V 2850 pF @ 25 V
FET Feature - - - - - -
Power Dissipation (Max) 280W (Tc) 280W (Tc) 280W (Tc) 280W (Tc) 150W (Tc) 180W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-247 (IXTH) TO-247AC TO-247AC TO-247AC TO-247AC TO-247-3
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3

Related Product By Categories

IRF7420TRPBF
IRF7420TRPBF
Infineon Technologies
MOSFET P-CH 12V 11.5A 8SO
STP9N65M2
STP9N65M2
STMicroelectronics
MOSFET N-CH 650V 5A TO220
FDMA8884
FDMA8884
Fairchild Semiconductor
MOSFET N-CH 30V 6.5/8A 6MICROFET
IRF7450
IRF7450
Infineon Technologies
MOSFET N-CH 200V 2.5A 8SO
IRL3716
IRL3716
Infineon Technologies
MOSFET N-CH 20V 180A TO220AB
FQD4N20LTM
FQD4N20LTM
onsemi
MOSFET N-CH 200V 3.2A DPAK
FQI3P50TU
FQI3P50TU
onsemi
MOSFET P-CH 500V 2.7A I2PAK
SI5433BDC-T1-E3
SI5433BDC-T1-E3
Vishay Siliconix
MOSFET P-CH 20V 4.8A 1206-8
AON6405
AON6405
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 15A 8DFN
IRFH7110TR2PBF
IRFH7110TR2PBF
Infineon Technologies
MOSFET N CH 100V 11A PQFN5X6
IXTA02N250
IXTA02N250
IXYS
MOSFET N-CH 2500V 200MA TO263
MCH6337-TL-W
MCH6337-TL-W
onsemi
MOSFET P-CH 20V 4.5A 6MCPH

Related Product By Brand

DSEI60-10A
DSEI60-10A
IXYS
DIODE GEN PURP 1KV 60A TO247AD
DSI30-08AS-TRL
DSI30-08AS-TRL
IXYS
DIODE GEN PURP 800V 30A TO263
IXTP55N075T
IXTP55N075T
IXYS
MOSFET N-CH 75V 55A TO220AB
IXTP7N60PM
IXTP7N60PM
IXYS
MOSFET N-CH 600V 4A TO220AB
IXTQ160N075T
IXTQ160N075T
IXYS
MOSFET N-CH 75V 160A TO3P
IXFN180N10
IXFN180N10
IXYS
MOSFET N-CH 100V 180A SOT-227B
IXTP44N15T
IXTP44N15T
IXYS
MOSFET N-CH 150V 44A TO220AB
IXTY24N15T
IXTY24N15T
IXYS
MOSFET N-CH 150V 24A TO252
IXBH10N170
IXBH10N170
IXYS
IGBT 1700V 20A 140W TO247AD
IXGH17N100AU1
IXGH17N100AU1
IXYS
IGBT 1000V 34A 150W TO247AD
IXGH56N60A3
IXGH56N60A3
IXYS
IGBT 600V 150A 330W TO247
IXDF402PI
IXDF402PI
IXYS
IC GATE DRVR LOW-SIDE 8DIP