IXYS-FII50-12E - Transistors - IGBTs - Arrays Product Specifications and Latest Quotes

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IGBT Type:	NPT
Configuration:	Half Bridge
Voltage - Collector Emitter Breakdown (Max):	1200 V
Current - Collector (Ic) (Max):	50 A
Power - Max:	200 W
Vce(on) (Max) @ Vge, Ic:	2.6V @ 15V, 30A
Current - Collector Cutoff (Max):	400 µA
Input Capacitance (Cies) @ Vce:	2 nF @ 25 V
Input:	Standard
NTC Thermistor:	No
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	i4-Pac™-5
Supplier Device Package:	ISOPLUS i4-PAC™