DSS16-01AS-TRL
  • Share:

IXYS DSS16-01AS-TRL

Manufacturer No:
DSS16-01AS-TRL
Manufacturer:
IXYS
Package:
Tape & Reel (TR)
Datasheet:
DSS16-01AS-TRL Datasheet
ECAD Model:
-
Description:
DIODE SCHOTTKY 100V 16A TO263AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):16A
Voltage - Forward (Vf) (Max) @ If:790 mV @ 15 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:500 µA @ 100 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:TO-263AA
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

-
452

Please send RFQ , we will respond immediately.

Similar Products

Part Number DSS16-01AS-TRL DSS10-01AS-TRL  
Manufacturer IXYS IXYS
Product Status Active Active
Diode Type Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 100 V 100 V
Current - Average Rectified (Io) 16A 10A
Voltage - Forward (Vf) (Max) @ If 790 mV @ 15 A 840 mV @ 10 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - -
Current - Reverse Leakage @ Vr 500 µA @ 100 V 300 µA @ 100 V
Capacitance @ Vr, F - -
Mounting Type Surface Mount Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package TO-263AA TO-263AA
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C

Related Product By Categories

LL4148
LL4148
onsemi
DIODE GEN PURP 100V 200MA SOD80
GB01SLT12-252
GB01SLT12-252
GeneSiC Semiconductor
DIODE SILICON 1.2KV 1A TO252
PMEG6030EVP115
PMEG6030EVP115
NXP USA Inc.
RECTIFIER DIODE, SCHOTTKY
ACGRB207-HF
ACGRB207-HF
Comchip Technology
DIODE GEN PURP 1KV 2A DO214AA
SS16-AU_R1_000A1
SS16-AU_R1_000A1
Panjit International Inc.
SMA, SKY
NRTS1260PFST3G
NRTS1260PFST3G
onsemi
DIODE SCHOTTKY 12A 60V TO277-3
MUR460S V7G
MUR460S V7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO214AB
MA3X74800L
MA3X74800L
Panasonic Electronic Components
DIODE SCHOTTKY 20V 500MA MINI3
SF16GHR1G
SF16GHR1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO204AL
SF22-AP
SF22-AP
Micro Commercial Co
DIODE GPP SUPER FAST 2A DO-15
SF13G
SF13G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A DO204AL
RB168VWM-30TFTR
RB168VWM-30TFTR
Rohm Semiconductor
30V, 1A, SINGLE, PMDE, ULTRA LOW

Related Product By Brand

DSS6-0045AS-TRL
DSS6-0045AS-TRL
IXYS
DIODE SCHOTTKY 45V 6A TO252AA
IXFH46N65X3
IXFH46N65X3
IXYS
MOSFET 46A 650V X3 TO247
VMO580-02F
VMO580-02F
IXYS
MOSFET N-CH 200V 580A Y3-LI
IXTH16N10D2
IXTH16N10D2
IXYS
MOSFET N-CH 100V 16A TO247
IXFK50N85X
IXFK50N85X
IXYS
MOSFET N-CH 850V 50A TO264
IXTQ26P20P
IXTQ26P20P
IXYS
MOSFET P-CH 200V 26A TO3P
IXFT7N90Q
IXFT7N90Q
IXYS
MOSFET N-CH 900V 7A TO268
IXFE48N50Q
IXFE48N50Q
IXYS
MOSFET N-CH 500V 41A SOT-227B
IXFN25N90
IXFN25N90
IXYS
MOSFET N-CH 900V 25A SOT-227B
IXYX25N250CV1HV
IXYX25N250CV1HV
IXYS
IGBT 2500V 235A PLUS247
IXGH30N60A
IXGH30N60A
IXYS
IGBT 600V 50A 200W TO247AD
IXGH30N60C2D4
IXGH30N60C2D4
IXYS
IGBT 600V 60A TO247AD