DSS16-0045A
  • Share:

IXYS DSS16-0045A

Manufacturer No:
DSS16-0045A
Manufacturer:
IXYS
Package:
Tube
Datasheet:
DSS16-0045A Datasheet
ECAD Model:
-
Description:
DIODE SCHOTTKY 45V 16A TO-220AC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):45 V
Current - Average Rectified (Io):16A
Voltage - Forward (Vf) (Max) @ If:670 mV @ 15 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:500 µA @ 45 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:TO-220AC
Operating Temperature - Junction:- 
0 Remaining View Similar

In Stock

$1.83
42

Please send RFQ , we will respond immediately.

Similar Products

Part Number DSS16-0045A DSS16-0045B   DSS10-0045A  
Manufacturer IXYS IXYS IXYS
Product Status Active Active Active
Diode Type Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 45 V 45 V 45 V
Current - Average Rectified (Io) 16A 16A 10A
Voltage - Forward (Vf) (Max) @ If 670 mV @ 15 A 480 mV @ 15 A 680 mV @ 10 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - -
Current - Reverse Leakage @ Vr 500 µA @ 45 V 10 mA @ 45 V 300 µA @ 45 V
Capacitance @ Vr, F - - -
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-220-2 TO-220-2 TO-220-2
Supplier Device Package TO-220AC TO-220AC TO-220AC
Operating Temperature - Junction - -55°C ~ 150°C -55°C ~ 175°C

Related Product By Categories

CUS05S30,H3F
CUS05S30,H3F
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 30V 500MA USC
MBR120AFC_R1_00001
MBR120AFC_R1_00001
Panjit International Inc.
SMAF-C, SKY
SDUR1030
SDUR1030
SMC Diode Solutions
DIODE GEN PURP 300V TO220AC
ER3A_R1_00001
ER3A_R1_00001
Panjit International Inc.
SURFACE MOUNT RECTIFIER
1N5391GP-TP
1N5391GP-TP
Micro Commercial Co
DIODE GPP 1.5A DO-15
SK16BH
SK16BH
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 1A DO214AA
V8PL6-M3/87A
V8PL6-M3/87A
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 60V 4.3A TO277A
SFAS804GH
SFAS804GH
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 8A TO263AB
HER106G-D1-0000
HER106G-D1-0000
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 600V 1A DO41
HS1JL RFG
HS1JL RFG
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A SUB SMA
SRA1060 C0G
SRA1060 C0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 10A TO220AC
SFT17GH
SFT17GH
Taiwan Semiconductor Corporation
DIODE GEN PURP 1A 500V TS-1

Related Product By Brand

VUO36-08NO8
VUO36-08NO8
IXYS
BRIDGE RECT 3PHASE 800V 27A FO-B
DMA80IM1600HB
DMA80IM1600HB
IXYS
PWR DIODE RECT 80A 1600V TO-247
IXTH64N65X
IXTH64N65X
IXYS
MOSFET N-CH 650V 64A TO247
IXFX120N20
IXFX120N20
IXYS
MOSFET N-CH 200V 120A PLUS247
IXTV26N50P
IXTV26N50P
IXYS
MOSFET N-CH 500V 26A PLUS220
IXFT24N50
IXFT24N50
IXYS
MOSFET N-CH 500V 24A TO268
IXTP36N20T
IXTP36N20T
IXYS
MOSFET N-CH 200V 36A TO220AB
IXTT60N10
IXTT60N10
IXYS
MOSFET N-CH 100V 60A TO268
IXYX110N120C4
IXYX110N120C4
IXYS
IGBT 1200V 110A GEN4 XPT PLUS247
IXGH40N120C3
IXGH40N120C3
IXYS
IGBT 1200V 75A 380W TO247
IXGX75N250
IXGX75N250
IXYS
IGBT 2500V 170A 780W PLUS247
IXGP12N100A
IXGP12N100A
IXYS
IGBT 1000V 24A 100W TO220AB