DSI30-16A
  • Share:

IXYS DSI30-16A

Manufacturer No:
DSI30-16A
Manufacturer:
IXYS
Package:
Tube
Datasheet:
DSI30-16A Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 1.6KV 30A TO220AC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1600 V
Current - Average Rectified (Io):30A
Voltage - Forward (Vf) (Max) @ If:1.29 V @ 30 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:40 µA @ 1600 V
Capacitance @ Vr, F:10pF @ 400V, 1MHz
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:TO-220AC
Operating Temperature - Junction:-40°C ~ 175°C
0 Remaining View Similar

In Stock

$2.66
102

Please send RFQ , we will respond immediately.

Similar Products

Part Number DSI30-16A DSI30-12A  
Manufacturer IXYS IXYS
Product Status Active Active
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 1600 V 1200 V
Current - Average Rectified (Io) 30A 30A
Voltage - Forward (Vf) (Max) @ If 1.29 V @ 30 A 1.29 V @ 30 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) - -
Current - Reverse Leakage @ Vr 40 µA @ 1600 V 40 µA @ 1200 V
Capacitance @ Vr, F 10pF @ 400V, 1MHz 10pF @ 400V, 1MHz
Mounting Type Through Hole Through Hole
Package / Case TO-220-2 TO-220-2
Supplier Device Package TO-220AC TO-220AC
Operating Temperature - Junction -40°C ~ 175°C -40°C ~ 175°C

Related Product By Categories

HERAF1606G
HERAF1606G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 16A ITO220AC
HS3FB R5G
HS3FB R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 3A DO214AA
1N4007WS
1N4007WS
MDD
RECTIFIER DIODE 1KV 1A SOD-323
NHPV08S600G
NHPV08S600G
onsemi
DIODE GEN PURP 600V 8A TO220-2
FFSH5065A-F155
FFSH5065A-F155
onsemi
SIC DIODE TO247 650V
PR1005-T
PR1005-T
Diodes Incorporated
DIODE GEN PURP 600V 1A DO41
SK215AH
SK215AH
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 150V 2A DO214AC
VS-3ECH01HM3/9AT
VS-3ECH01HM3/9AT
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 3A SMC
UPS160E3/TR7
UPS160E3/TR7
Microchip Technology
DIODE SCHOTTKY 60V 1A POWERMITE1
1N2280R
1N2280R
Solid State Inc.
DO5 40 AMP SILICON RECTFIER
VS-12TQ040STRRPBF
VS-12TQ040STRRPBF
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 40V 15A D2PAK
1N4007GPE-E3/91
1N4007GPE-E3/91
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 1A DO204AL

Related Product By Brand

DHG10I600PA
DHG10I600PA
IXYS
DIODE GEN PURP 600V 10A TO220AC
DSAI35-12A
DSAI35-12A
IXYS
DIODE AVALANCHE 1.2KV 49A DO203
MCC72-12IO8B
MCC72-12IO8B
IXYS
MOD THYRISTOR DUAL 1200V TO240AA
IXFH50N20
IXFH50N20
IXYS
MOSFET N-CH 200V 50A TO247AD
IXTL2N450
IXTL2N450
IXYS
MOSFET N-CH 4500V 2A I5PAK
IXTH16N20D2
IXTH16N20D2
IXYS
MOSFET N-CH 200V 16A TO247
IXFR24N100Q3
IXFR24N100Q3
IXYS
MOSFET N-CH 1000V 18A ISOPLUS247
IXFA5N100P-TRL
IXFA5N100P-TRL
IXYS
MOSFET N-CH 1000V 5A TO263
IXFK33N50
IXFK33N50
IXYS
MOSFET N-CH 500V 33A TO264AA
IXGP16N60C2D1
IXGP16N60C2D1
IXYS
IGBT 600V 40A 150W TO220
IXDE509SIAT/R
IXDE509SIAT/R
IXYS
IC GATE DRVR LOW-SIDE 8SOIC
IXK611P1
IXK611P1
IXYS
IC GATE DRVR HALF BRIDGE 8DIP