DSI30-12AS-TRL
  • Share:

IXYS DSI30-12AS-TRL

Manufacturer No:
DSI30-12AS-TRL
Manufacturer:
IXYS
Package:
Tape & Reel (TR)
Datasheet:
DSI30-12AS-TRL Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 1.2KV 30A TO263
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1200 V
Current - Average Rectified (Io):30A
Voltage - Forward (Vf) (Max) @ If:1.29 V @ 30 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:40 µA @ 1200 V
Capacitance @ Vr, F:10pF @ 400V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:TO-263AA
Operating Temperature - Junction:-40°C ~ 175°C
0 Remaining View Similar

In Stock

$2.72
21

Please send RFQ , we will respond immediately.

Similar Products

Part Number DSI30-12AS-TRL DSI30-16AS-TRL  
Manufacturer IXYS IXYS
Product Status Active Active
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 1200 V 1600 V
Current - Average Rectified (Io) 30A 30A
Voltage - Forward (Vf) (Max) @ If 1.29 V @ 30 A 1.29 V @ 30 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) - -
Current - Reverse Leakage @ Vr 40 µA @ 1200 V 40 µA @ 1600 V
Capacitance @ Vr, F 10pF @ 400V, 1MHz 10pF @ 400V, 1MHz
Mounting Type Surface Mount Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package TO-263AA TO-263AA
Operating Temperature - Junction -40°C ~ 175°C -40°C ~ 175°C

Related Product By Categories

S2D-E3/5BT
S2D-E3/5BT
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 1.5A DO214AA
RURD860S9A
RURD860S9A
Harris Corporation
8A, 400V-600V ULTRAFAST DIODE
SB2H90-E3/73
SB2H90-E3/73
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 90V 2A DO204AC
MUR360SBH
MUR360SBH
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO214AA
S1B-E3/51T
S1B-E3/51T
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 1A DO214AC
DSI17-12A
DSI17-12A
IXYS
DIODE AVALANCHE 1.2KV 25A DO203
1N4003GL TR
1N4003GL TR
Central Semiconductor Corp
DIODE GEN PURP 200V 1A DO41
S3MHM6G
S3MHM6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 3A DO214AB
SF2L8G B0G
SF2L8G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 2A DO204AC
SRAF540H
SRAF540H
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 40V 5A ITO220AC
SCS206AGHRC
SCS206AGHRC
Rohm Semiconductor
DIODE SCHOTTKY 650V 6A TO-220-2
RB058L-30TE25
RB058L-30TE25
Rohm Semiconductor
DIODE SCHOTTKY 30V 3A PMDS

Related Product By Brand

VVZ175-16IO7
VVZ175-16IO7
IXYS
RECT BRIDGE 3PH 167A 1600V PWSE2
MCD250-16IO1
MCD250-16IO1
IXYS
MOD THYRISTOR/DIODE 1600V Y2-DCB
CS60-16IO1
CS60-16IO1
IXYS
SCR 1.6KV 75A PLUS247-3
IXFR140N20P
IXFR140N20P
IXYS
MOSFET N-CH 200V 90A ISOPLUS247
IXFX80N50P
IXFX80N50P
IXYS
MOSFET N-CH 500V 80A PLUS247-3
IXTA240N055T
IXTA240N055T
IXYS
MOSFET N-CH 55V 240A TO263
IXFH74N20
IXFH74N20
IXYS
MOSFET N-CH 200V 74A TO247AD
IXFH80N10
IXFH80N10
IXYS
MOSFET N-CH 100V 80A TO247AD
IXYN120N120C3
IXYN120N120C3
IXYS
IGBT MOD 1200V 240A SOT227B
IXGH32N120A3
IXGH32N120A3
IXYS
IGBT 1200V 75A 300W TO247
IXGR32N90B2D1
IXGR32N90B2D1
IXYS
IGBT 900V 47A 160W ISOPLUS247
IXGH24N60C4
IXGH24N60C4
IXYS
IGBT 600V 56A 190W TO247