DSI30-08AC
  • Share:

IXYS DSI30-08AC

Manufacturer No:
DSI30-08AC
Manufacturer:
IXYS
Package:
Tube
Datasheet:
DSI30-08AC Datasheet
ECAD Model:
-
Description:
DIODE GP 800V 30A ISOPLUS220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):800 V
Current - Average Rectified (Io):30A
Voltage - Forward (Vf) (Max) @ If:1.45 V @ 45 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:50 µA @ 800 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:ISOPLUS220™
Supplier Device Package:ISOPLUS220™
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

-
134

Please send RFQ , we will respond immediately.

Similar Products

Part Number DSI30-08AC DSI30-08A  
Manufacturer IXYS IXYS
Product Status Obsolete Active
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 800 V 800 V
Current - Average Rectified (Io) 30A 30A
Voltage - Forward (Vf) (Max) @ If 1.45 V @ 45 A 1.29 V @ 30 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) - -
Current - Reverse Leakage @ Vr 50 µA @ 800 V 40 µA @ 800 V
Capacitance @ Vr, F - 10pF @ 400V, 1MHz
Mounting Type Through Hole Through Hole
Package / Case ISOPLUS220™ TO-220-2
Supplier Device Package ISOPLUS220™ TO-220AC
Operating Temperature - Junction -55°C ~ 150°C -40°C ~ 175°C

Related Product By Categories

VSS8D2M12HM3/I
VSS8D2M12HM3/I
Vishay General Semiconductor - Diodes Division
2A, 120V, SLIMSMAW TRENCH SKY
TST30L100CW
TST30L100CW
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 15A TO220AB
S5J_R1_00001
S5J_R1_00001
Panjit International Inc.
SMC, GENERAL
BAS16-E3-18
BAS16-E3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 150MA SOT23
S5GBH
S5GBH
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 5A DO214AA
HS2AA
HS2AA
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1.5A DO214AC
VIT3080S-M3/4W
VIT3080S-M3/4W
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30A 80V TO-262AA
JAN1N4153-1
JAN1N4153-1
Microchip Technology
DIODE GEN PURP 75V 150MA DO35
VF30100S-E3/45
VF30100S-E3/45
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 30A ITO220AB
S1GLHMHG
S1GLHMHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A SUB SMA
UF1D B0G
UF1D B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A DO204AL
BAS70T-7-G
BAS70T-7-G
Diodes Incorporated
DIODE SCHOTTKY SOT23

Related Product By Brand

DSEC60-03A
DSEC60-03A
IXYS
DIODE ARRAY GP 300V 30A TO247AD
W6672TE350
W6672TE350
IXYS
DIODE GEN PURP 1.9KV 6672A -
CMA80PD1600NA
CMA80PD1600NA
IXYS
MOD THYRISTOR DUAL 1600V SOT-227
MCC72-08IO8B
MCC72-08IO8B
IXYS
MOD THYRISTOR DUAL 800V TO-240AA
IXTP140P05T
IXTP140P05T
IXYS
MOSFET P-CH 50V 140A TO220AB
IXTA12N50P
IXTA12N50P
IXYS
MOSFET N-CH 500V 12A TO263
IXFP130N10T2
IXFP130N10T2
IXYS
MOSFET N-CH 100V 130A TO220AB
IXFN55N50F
IXFN55N50F
IXYS
MOSFET N-CH 500V 55A SOT227B
IXSH20N60B2D1
IXSH20N60B2D1
IXYS
IGBT 600V 35A 190W TO247
IXGR60N60C3C1
IXGR60N60C3C1
IXYS
IGBT 600V 75A 170W ISOPLUS247
IX4R11S3T/R
IX4R11S3T/R
IXYS
IC GATE DRVR HALF-BRIDGE 16SOIC
IXD611S1
IXD611S1
IXYS
IC GATE DRVR HALF-BRIDGE 8SOIC