DSEP30-06BR
  • Share:

IXYS DSEP30-06BR

Manufacturer No:
DSEP30-06BR
Manufacturer:
IXYS
Package:
Tube
Datasheet:
DSEP30-06BR Datasheet
ECAD Model:
-
Description:
DIODE GP 600V 30A ISOPLUS247
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):30A
Voltage - Forward (Vf) (Max) @ If:2.51 V @ 30 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):30 ns
Current - Reverse Leakage @ Vr:250 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:ISOPLUS247™
Supplier Device Package:ISOPLUS247™ (BR)
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

$5.77
24

Please send RFQ , we will respond immediately.

Similar Products

Part Number DSEP30-06BR DSEP30-06CR   DSEP30-06B  
Manufacturer IXYS IXYS IXYS
Product Status Active Obsolete Active
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 600 V
Current - Average Rectified (Io) 30A 30A 30A
Voltage - Forward (Vf) (Max) @ If 2.51 V @ 30 A 3.07 V @ 30 A 2.51 V @ 30 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 30 ns 15 ns 30 ns
Current - Reverse Leakage @ Vr 250 µA @ 600 V 250 µA @ 600 V 250 µA @ 600 V
Capacitance @ Vr, F - - -
Mounting Type Through Hole Through Hole Through Hole
Package / Case ISOPLUS247™ TO-247-3 ISOPLUS247™
Supplier Device Package ISOPLUS247™ (BR) ISOPLUS247™ ISOPLUS247™ (BR)
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

Related Product By Categories

SS26-LTP
SS26-LTP
Micro Commercial Co
DIODE SCHOTTKY 2A 60V SMA
MB56_R1_00001
MB56_R1_00001
Panjit International Inc.
SMC, SKY
STPSC2H12B2Y-TR
STPSC2H12B2Y-TR
STMicroelectronics
AUTOMOTIVE 1200 V, 2 A HIGH SURG
NTE5981
NTE5981
NTE Electronics, Inc
R-50 PRV 40A ANODE CASE
F1T7G
F1T7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1A TS-1
UG1D-M3/54
UG1D-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 1A DO204AL
SF5400-TAP
SF5400-TAP
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 3A SOD64
JAN1N5551US/TR
JAN1N5551US/TR
Microchip Technology
RECTIFIER UFR,FRR
30WQ04FNTRL
30WQ04FNTRL
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 40V 3.5A DPAK
MBRS1100TR
MBRS1100TR
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 1A SMB
SS5P6-E3/86A
SS5P6-E3/86A
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 60V 5A TO277A
RSFMLHRHG
RSFMLHRHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 500MA SUB SMA

Related Product By Brand

VUO35-16NO7
VUO35-16NO7
IXYS
BRIDGE RECT 3P 1.6KV 38A PWS-A
DGS9-030AS
DGS9-030AS
IXYS
DIODE SCHOTTKY 300V 11A TO252AA
IXFH48N60X3
IXFH48N60X3
IXYS
MOSFET ULTRA JCT 600V 48A TO247
IXFP14N85X
IXFP14N85X
IXYS
MOSFET N-CH 850V 14A TO220AB
IXTB62N50L
IXTB62N50L
IXYS
MOSFET N-CH 500V 62A PLUS264
IXTK88N30P
IXTK88N30P
IXYS
MOSFET N-CH 300V 88A TO264
IXTX22N100L
IXTX22N100L
IXYS
MOSFET N-CH 1000V 22A PLUS247-3
IXTA5N60P
IXTA5N60P
IXYS
MOSFET N-CH 600V 5A TO263
IXFH14N100
IXFH14N100
IXYS
MOSFET N-CH 1000V 14A TO247AD
IXFN48N50U2
IXFN48N50U2
IXYS
MOSFET N-CH 500V 48A SOT-227B
IXFR15N100P
IXFR15N100P
IXYS
MOSFET N-CH 1000V ISOPLUS247
IXGR50N60C2
IXGR50N60C2
IXYS
IGBT 600V 75A 200W ISOPLUS247