DSEP30-06B
  • Share:

IXYS DSEP30-06B

Manufacturer No:
DSEP30-06B
Manufacturer:
IXYS
Package:
Tube
Datasheet:
DSEP30-06B Datasheet
ECAD Model:
-
Description:
DIODE GP 600V 30A ISOPLUS247
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):30A
Voltage - Forward (Vf) (Max) @ If:2.51 V @ 30 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):30 ns
Current - Reverse Leakage @ Vr:250 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:ISOPLUS247™
Supplier Device Package:ISOPLUS247™ (BR)
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

$4.90
127

Please send RFQ , we will respond immediately.

Similar Products

Part Number DSEP30-06B DSEP30-06BR   DSEP30-06A  
Manufacturer IXYS IXYS IXYS
Product Status Active Active Active
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 600 V
Current - Average Rectified (Io) 30A 30A 30A
Voltage - Forward (Vf) (Max) @ If 2.51 V @ 30 A 2.51 V @ 30 A 1.6 V @ 30 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 30 ns 30 ns 35 ns
Current - Reverse Leakage @ Vr 250 µA @ 600 V 250 µA @ 600 V 250 µA @ 600 V
Capacitance @ Vr, F - - -
Mounting Type Through Hole Through Hole Through Hole
Package / Case ISOPLUS247™ ISOPLUS247™ TO-247-2
Supplier Device Package ISOPLUS247™ (BR) ISOPLUS247™ (BR) TO-247AD
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

Related Product By Categories

MBR360G
MBR360G
onsemi
DIODE SCHOTTKY 60V 3A DO201AD
PMEG3005AESF,315
PMEG3005AESF,315
NXP Semiconductors
PMEG3005AESF - 30V, 0.5A LOW VF
BYM10-600-E3/97
BYM10-600-E3/97
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A DO213AB
SS110
SS110
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 1A DO214AC
CDBM120L-G
CDBM120L-G
Comchip Technology
DIODE SCHOTTKY 20V 1A MINISMA
JANTX1N4150UR-1
JANTX1N4150UR-1
Microchip Technology
DIODE GEN PURP 50V 200MA DO213AA
B220A-13
B220A-13
Diodes Incorporated
DIODE SCHOTTKY 20V 2A SMA
10MQ100NTR
10MQ100NTR
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 2.1A SMA
1N5400RL
1N5400RL
onsemi
DIODE GEN PURP 50V 3A DO201AD
1N4153TR
1N4153TR
onsemi
DIODE GEN PURP 75V 200MA DO35
SS13LHMQG
SS13LHMQG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 1A SUB SMA
UD0506T-TL-H
UD0506T-TL-H
onsemi
DIODE GEN PURP 600V 5A TPFA

Related Product By Brand

FUS45-0045B
FUS45-0045B
IXYS
BRIDGE RECT 3P 45V 45A I4-PAC
VBO52-16NO7
VBO52-16NO7
IXYS
BRIDGE RECT 1P 1.6KV 52A PWS-D
DLA10IM800UC-TRL
DLA10IM800UC-TRL
IXYS
DIODE GEN PURP 800V 10A TO252
IXTH12N100L
IXTH12N100L
IXYS
MOSFET N-CH 1000V 12A TO247
IXTK102N30P
IXTK102N30P
IXYS
MOSFET N-CH 300V 102A TO264
IXTA3N110-TRL
IXTA3N110-TRL
IXYS
MOSFET N-CH 1100V 3A TO263
IXTA86N20T
IXTA86N20T
IXYS
MOSFET N-CH 200V 86A TO263
IXFK73N30Q
IXFK73N30Q
IXYS
MOSFET N-CH 300V 73A TO264AA
IXGH6N170
IXGH6N170
IXYS
IGBT 1700V 12A 75W TO247
IXGP28N120B
IXGP28N120B
IXYS
IGBT 1200V 50A 250W TO220
IXGQ20N120B
IXGQ20N120B
IXYS
IGBT 1200V 40A 190W TO3P
IXGT24N170AH1
IXGT24N170AH1
IXYS
IGBT 1700V 24A 250W TO268