DSEP30-06B
  • Share:

IXYS DSEP30-06B

Manufacturer No:
DSEP30-06B
Manufacturer:
IXYS
Package:
Tube
Datasheet:
DSEP30-06B Datasheet
ECAD Model:
-
Description:
DIODE GP 600V 30A ISOPLUS247
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):30A
Voltage - Forward (Vf) (Max) @ If:2.51 V @ 30 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):30 ns
Current - Reverse Leakage @ Vr:250 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:ISOPLUS247™
Supplier Device Package:ISOPLUS247™ (BR)
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

$4.90
127

Please send RFQ , we will respond immediately.

Similar Products

Part Number DSEP30-06B DSEP30-06BR   DSEP30-06A  
Manufacturer IXYS IXYS IXYS
Product Status Active Active Active
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 600 V
Current - Average Rectified (Io) 30A 30A 30A
Voltage - Forward (Vf) (Max) @ If 2.51 V @ 30 A 2.51 V @ 30 A 1.6 V @ 30 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 30 ns 30 ns 35 ns
Current - Reverse Leakage @ Vr 250 µA @ 600 V 250 µA @ 600 V 250 µA @ 600 V
Capacitance @ Vr, F - - -
Mounting Type Through Hole Through Hole Through Hole
Package / Case ISOPLUS247™ ISOPLUS247™ TO-247-2
Supplier Device Package ISOPLUS247™ (BR) ISOPLUS247™ (BR) TO-247AD
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

Related Product By Categories

UF4003
UF4003
onsemi
DIODE GEN PURP 200V 1A DO204AL
SMLJ60S6-TP
SMLJ60S6-TP
Micro Commercial Co
DIODE GEN PURP 600V 6A DO214AB
V25PN60-M3/86A
V25PN60-M3/86A
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 60V 6.4A TO277A
FR12G05
FR12G05
GeneSiC Semiconductor
DIODE GEN PURP 400V 12A DO4
SS3P4HE3/84A
SS3P4HE3/84A
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 40V 3A DO220AA
SK36E3/TR13
SK36E3/TR13
Microsemi Corporation
DIODE SCHOTTKY 60V 3A DO214AB
UH2BHE3_A/I
UH2BHE3_A/I
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 2A DO214AA
SFA802GHC0G
SFA802GHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 8A TO220AC
SFAF2005G C0G
SFAF2005G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 20A ITO220AC
SBRT15M50SP5-7
SBRT15M50SP5-7
Diodes Incorporated
DIODE ARRAY SCHOTTKY
RL1N4007
RL1N4007
Rectron USA
DIODE GEN PURP 1000V 1A A-405
BAS21VMTE-17
BAS21VMTE-17
Rohm Semiconductor
BAS21VM IS SWITCHING DIODE FOR G

Related Product By Brand

DSEE29-06CC
DSEE29-06CC
IXYS
DIODE ARRAY 600V 30A ISOPLUS220
DNA30E2200PC
DNA30E2200PC
IXYS
DIODE GEN PURP 2.2KV 30A TO263
MCD310-22IO1
MCD310-22IO1
IXYS
MOD THYRISTOR/DIODE 2200V Y2-DCB
IXTH10P50P
IXTH10P50P
IXYS
MOSFET P-CH 500V 10A TO247
IXTU02N50D
IXTU02N50D
IXYS
MOSFET N-CH 500V 200MA TO251
IXTN110N20L2
IXTN110N20L2
IXYS
MOSFET N-CH 200V 100A SOT227B
IXTA62N15P
IXTA62N15P
IXYS
MOSFET N-CH 150V 62A TO263
IXTA48N20T
IXTA48N20T
IXYS
MOSFET N-CH 200V 48A TO263
IXTP5N60P
IXTP5N60P
IXYS
MOSFET N-CH 600V 5A TO220AB
IXFR26N50
IXFR26N50
IXYS
MOSFET N-CH 500V 26A ISOPLUS247
IXGP8N100
IXGP8N100
IXYS
IGBT 1000V 16A 54W TO220
IXST30N60CD1
IXST30N60CD1
IXYS
IGBT 600V 55A 200W TO268