DSEP29-06A
  • Share:

IXYS DSEP29-06A

Manufacturer No:
DSEP29-06A
Manufacturer:
IXYS
Package:
Tube
Datasheet:
DSEP29-06A Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 600V 30A TO220AC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):30A
Voltage - Forward (Vf) (Max) @ If:1.61 V @ 30 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):35 ns
Current - Reverse Leakage @ Vr:250 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:TO-220AC
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

$3.07
9

Please send RFQ , we will respond immediately.

Similar Products

Part Number DSEP29-06A DSEP29-06B   DSEP29-03A  
Manufacturer IXYS IXYS IXYS
Product Status Active Active Obsolete
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 300 V
Current - Average Rectified (Io) 30A 30A 30A
Voltage - Forward (Vf) (Max) @ If 1.61 V @ 30 A 2.52 V @ 30 A 1.26 V @ 30 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 35 ns 30 ns 30 ns
Current - Reverse Leakage @ Vr 250 µA @ 600 V 250 µA @ 600 V 10 µA @ 300 V
Capacitance @ Vr, F - - -
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-220-2 TO-220-2 TO-220-2
Supplier Device Package TO-220AC TO-220AC TO-220AC
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

Related Product By Categories

CDBT0230-HF
CDBT0230-HF
Comchip Technology
DIODE SCHOTTKY 30V 200MA SOT23
S1BFL
S1BFL
onsemi
DIODE GP 100V 1A SOD123F
NTSB20U100CTT4G
NTSB20U100CTT4G
onsemi
RECTIFIER DIODE, SCHOTTKY, 1 PHA
40HF160
40HF160
Solid State Inc.
DO5 40 AMP SILICON RECTFIER KK
NTE5931
NTE5931
NTE Electronics, Inc
R-1200V 70A DO5 AK
MUR1100ERLG
MUR1100ERLG
onsemi
DIODE GEN PURP 1000V 1A AXIAL
UF200G_R2_00001
UF200G_R2_00001
Panjit International Inc.
GLASS PASSIVATED JUNCTION ULTRAF
SFS1008G
SFS1008G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 10A TO263AB
SR503-T
SR503-T
Diodes Incorporated
DIODE SCHOTTKY 30V 5A DO201AD
CD1206-B240
CD1206-B240
Bourns Inc.
DIODE SCHOTTKY 40V 2A 1206
MUR310SHM6G
MUR310SHM6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 3A DO214AB
SFAF502G C0G
SFAF502G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 5A ITO220AC

Related Product By Brand

DSP25-12A
DSP25-12A
IXYS
DIODE ARRAY GP 1200V 28A TO247AD
VVZ40-16IO1
VVZ40-16IO1
IXYS
RECT BRIDGE 3PH 34A 1600V KAMM
MCC21-14IO8B
MCC21-14IO8B
IXYS
MOD THYRISTOR DUAL 1400V TO240AA
IXFQ140N20X3
IXFQ140N20X3
IXYS
MOSFET N-CH 200V 140A TO3P
IXTH80N65X2
IXTH80N65X2
IXYS
MOSFET N-CH 650V 80A TO247
IXTP230N04T4M
IXTP230N04T4M
IXYS
MOSFET N-CH 40V 230A TO220
IXTP32N65X
IXTP32N65X
IXYS
MOSFET N-CH 650V 32A TO220-3
IXFN150N15
IXFN150N15
IXYS
MOSFET N-CH 150V 150A SOT227B
IXFN70N60Q2
IXFN70N60Q2
IXYS
MOSFET N-CH 600V 70A SOT-227B
IXFX24N90Q
IXFX24N90Q
IXYS
MOSFET N-CH 900V 24A PLUS247-3
IXGT30N60C2D1
IXGT30N60C2D1
IXYS
IGBT 600V 70A 190W TO268
IXB611S1T/R
IXB611S1T/R
IXYS
IC GATE DRVR HALF BRIDGE 8SOIC