DSEP29-06A
  • Share:

IXYS DSEP29-06A

Manufacturer No:
DSEP29-06A
Manufacturer:
IXYS
Package:
Tube
Datasheet:
DSEP29-06A Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 600V 30A TO220AC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):30A
Voltage - Forward (Vf) (Max) @ If:1.61 V @ 30 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):35 ns
Current - Reverse Leakage @ Vr:250 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:TO-220AC
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

$3.07
9

Please send RFQ , we will respond immediately.

Similar Products

Part Number DSEP29-06A DSEP29-06B   DSEP29-03A  
Manufacturer IXYS IXYS IXYS
Product Status Active Active Obsolete
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 300 V
Current - Average Rectified (Io) 30A 30A 30A
Voltage - Forward (Vf) (Max) @ If 1.61 V @ 30 A 2.52 V @ 30 A 1.26 V @ 30 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 35 ns 30 ns 30 ns
Current - Reverse Leakage @ Vr 250 µA @ 600 V 250 µA @ 600 V 10 µA @ 300 V
Capacitance @ Vr, F - - -
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-220-2 TO-220-2 TO-220-2
Supplier Device Package TO-220AC TO-220AC TO-220AC
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

Related Product By Categories

SB10-05P-TD-E
SB10-05P-TD-E
onsemi
DIODE SCHOTTKY 50V 1A PCP
HSM276SRTL-E
HSM276SRTL-E
Renesas Electronics America Inc
RECTIFIER DIODE, SCHOTTKY
BAS316WS
BAS316WS
Diotec Semiconductor
DIODE SOD-323 100V 0.25A 4NS
PMEG3020CPAS115
PMEG3020CPAS115
NXP USA Inc.
RECTIFIER DIODE, SCHOTTKY
BD890YS_L2_00001
BD890YS_L2_00001
Panjit International Inc.
SURFACE MOUNT SCHOTTKY BARRIER R
FR302G
FR302G
SMC Diode Solutions
DIODE GPP 100V 3A DO201AD
1N2427R
1N2427R
Solid State Inc.
DO8 100 AMP SILICON RECTIFIER
VS-1N1183RA
VS-1N1183RA
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 40A DO203AB
VS-MBRB745PBF
VS-MBRB745PBF
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 45V 7.5A D2PAK
CUS01(TE85L,Q,M)
CUS01(TE85L,Q,M)
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 30V 1A USFLAT
US1GHR3G
US1GHR3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO214AC
SR003HB0G
SR003HB0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 500MA DO204AL

Related Product By Brand

DSS6-0025BS-TRL
DSS6-0025BS-TRL
IXYS
DIODE SCHOTTKY 25V 6A TO252AA
MCD225-12IO1
MCD225-12IO1
IXYS
MOD THYRISTOR/DIODE 1200V Y1-CU
IXFH100N25P
IXFH100N25P
IXYS
MOSFET N-CH 250V 100A TO247AD
IXFK220N20X3
IXFK220N20X3
IXYS
MOSFET N-CH 200V 220A TO264
IXFH7N100P
IXFH7N100P
IXYS
MOSFET N-CH 1000V 7A TO247
IXFX150N30P3
IXFX150N30P3
IXYS
MOSFET N-CH 300V 150A PLUS247-3
IXTA2N80P
IXTA2N80P
IXYS
MOSFET N-CH 800V 2A TO263
IXFN44N50U2
IXFN44N50U2
IXYS
MOSFET N-CH 500V 44A SOT-227B
IXTQ88N15
IXTQ88N15
IXYS
MOSFET N-CH 150V 88A TO3P
IXGA16N60B2
IXGA16N60B2
IXYS
IGBT 600V 40A 150W TO263
IXGH25N100U1
IXGH25N100U1
IXYS
IGBT 1000V 50A 200W TO247AD
IXGP30N60B4D1
IXGP30N60B4D1
IXYS
IGBT 600V 56A 190W TO220