DSEI60-12A
  • Share:

IXYS DSEI60-12A

Manufacturer No:
DSEI60-12A
Manufacturer:
IXYS
Package:
Tube
Datasheet:
DSEI60-12A Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 1.2KV 52A TO247AD
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1200 V
Current - Average Rectified (Io):52A
Voltage - Forward (Vf) (Max) @ If:2.55 V @ 60 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):60 ns
Current - Reverse Leakage @ Vr:2.2 mA @ 1200 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-247-2
Supplier Device Package:TO-247AD
Operating Temperature - Junction:-40°C ~ 150°C
0 Remaining View Similar

In Stock

$6.30
99

Please send RFQ , we will respond immediately.

Similar Products

Part Number DSEI60-12A DSEP60-12A   DSEI20-12A   DSEI30-12A   DSEI60-02A   DSEI60-10A  
Manufacturer IXYS IXYS IXYS IXYS IXYS IXYS
Product Status Active Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 1200 V 1200 V 1200 V 1200 V 200 V 1000 V
Current - Average Rectified (Io) 52A 60A 17A 26A 69A 60A
Voltage - Forward (Vf) (Max) @ If 2.55 V @ 60 A 2.66 V @ 60 A 2.15 V @ 12 A 2.55 V @ 30 A 1.08 V @ 60 A 2.3 V @ 60 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 60 ns 40 ns 60 ns 60 ns 50 ns 50 ns
Current - Reverse Leakage @ Vr 2.2 mA @ 1200 V 650 µA @ 1200 V 750 µA @ 1200 V 750 µA @ 1200 V 50 µA @ 200 V 3 mA @ 1000 V
Capacitance @ Vr, F - - - - - -
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-247-2 TO-247-2 TO-220-2 TO-247-2 TO-247-2 TO-247-2
Supplier Device Package TO-247AD TO-247AD TO-220AC TO-247AD TO-247AD TO-247AD
Operating Temperature - Junction -40°C ~ 150°C -55°C ~ 175°C -40°C ~ 150°C -40°C ~ 150°C -40°C ~ 150°C -40°C ~ 150°C

Related Product By Categories

MMBD4148W_R1_00001
MMBD4148W_R1_00001
Panjit International Inc.
SURFACE MOUNT SWITCHING DIODE
SVC4200V_R1_00001
SVC4200V_R1_00001
Panjit International Inc.
LOW VF SCHOTTKY BARRIER RECTIFIE
RS2DA R3G
RS2DA R3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1.5A DO214AC
NRVB1H100SFT3G
NRVB1H100SFT3G
onsemi
DIODE SCHOTTKY 100V 1A SOD123FL
PMEG3020CPAS115
PMEG3020CPAS115
NXP USA Inc.
RECTIFIER DIODE, SCHOTTKY
CMSH2-20L BK PBFREE
CMSH2-20L BK PBFREE
Central Semiconductor Corp
DIODE SCHOTTKY 20V 2A SMB
121NQ045R-1
121NQ045R-1
SMC Diode Solutions
DIODE SCHOTTKY 45V 120A PRM1-1
D1050N18TXPSA1
D1050N18TXPSA1
Infineon Technologies
DIODE GEN PURP 1.8KV 1050A
1N4938_T50R
1N4938_T50R
onsemi
DIODE GEN PURP 200V 500MA DO35
1N4003 TR
1N4003 TR
Central Semiconductor Corp
DIODE GEN PURP 200V 1A DO41
SRAF5150 C0G
SRAF5150 C0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 150V 5A ITO220AC
RFN2L4STE25
RFN2L4STE25
Rohm Semiconductor
DIODE GEN PURP 400V 1.5A PMDS

Related Product By Brand

VBO52-16NO7
VBO52-16NO7
IXYS
BRIDGE RECT 1P 1.6KV 52A PWS-D
MCD132-12IO1
MCD132-12IO1
IXYS
MOD THYRISTOR/DIODE 1200V Y4-M6
IXFH36N60X3
IXFH36N60X3
IXYS
MOSFET ULTRA JCT 600V 36A TO247
IXTT90P10P
IXTT90P10P
IXYS
MOSFET P-CH 100V 90A TO268
IXFK210N30X3
IXFK210N30X3
IXYS
MOSFET N-CH 300V 210A TO264
IXTT36N50P
IXTT36N50P
IXYS
MOSFET N-CH 500V 36A TO268
IXFA16N50P
IXFA16N50P
IXYS
MOSFET N-CH 500V 16A TO263
IXFK48N55
IXFK48N55
IXYS
MOSFET N-CH 550V 48A TO264AA
IXXH50N60C3
IXXH50N60C3
IXYS
IGBT 600V 100A 600W TO247AD
IXGP15N120B
IXGP15N120B
IXYS
IGBT 1200V 30A 150W TO220AB
IXDD409YI
IXDD409YI
IXYS
IC GATE DRVR LOW-SIDE TO263
IXF611P1
IXF611P1
IXYS
IC GATE DRVR MOSF/IGBT 8DIP