DSEI60-12A
  • Share:

IXYS DSEI60-12A

Manufacturer No:
DSEI60-12A
Manufacturer:
IXYS
Package:
Tube
Datasheet:
DSEI60-12A Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 1.2KV 52A TO247AD
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1200 V
Current - Average Rectified (Io):52A
Voltage - Forward (Vf) (Max) @ If:2.55 V @ 60 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):60 ns
Current - Reverse Leakage @ Vr:2.2 mA @ 1200 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-247-2
Supplier Device Package:TO-247AD
Operating Temperature - Junction:-40°C ~ 150°C
0 Remaining View Similar

In Stock

$6.30
99

Please send RFQ , we will respond immediately.

Similar Products

Part Number DSEI60-12A DSEP60-12A   DSEI20-12A   DSEI30-12A   DSEI60-02A   DSEI60-10A  
Manufacturer IXYS IXYS IXYS IXYS IXYS IXYS
Product Status Active Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 1200 V 1200 V 1200 V 1200 V 200 V 1000 V
Current - Average Rectified (Io) 52A 60A 17A 26A 69A 60A
Voltage - Forward (Vf) (Max) @ If 2.55 V @ 60 A 2.66 V @ 60 A 2.15 V @ 12 A 2.55 V @ 30 A 1.08 V @ 60 A 2.3 V @ 60 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 60 ns 40 ns 60 ns 60 ns 50 ns 50 ns
Current - Reverse Leakage @ Vr 2.2 mA @ 1200 V 650 µA @ 1200 V 750 µA @ 1200 V 750 µA @ 1200 V 50 µA @ 200 V 3 mA @ 1000 V
Capacitance @ Vr, F - - - - - -
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-247-2 TO-247-2 TO-220-2 TO-247-2 TO-247-2 TO-247-2
Supplier Device Package TO-247AD TO-247AD TO-220AC TO-247AD TO-247AD TO-247AD
Operating Temperature - Junction -40°C ~ 150°C -55°C ~ 175°C -40°C ~ 150°C -40°C ~ 150°C -40°C ~ 150°C -40°C ~ 150°C

Related Product By Categories

SBA120CS_R1_00001
SBA120CS_R1_00001
Panjit International Inc.
SOD-323, SKY
31DQ06
31DQ06
SMC Diode Solutions
3.3A, 60V, DO-201AD, SCHOTTKY
PMEG045V150EPD139
PMEG045V150EPD139
NXP USA Inc.
RECTIFIER DIODE, SCHOTTKY
V8P10HM3_A/H
V8P10HM3_A/H
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 8A TO277A
STTH61W04SW
STTH61W04SW
STMicroelectronics
DIODE GEN PURP 400V 60A TO247
RMPG06B-E3/53
RMPG06B-E3/53
Vishay General Semiconductor - Diodes Division
DIODE GPP 1A 100V 150NS MPG06
V20100SG-M3/4W
V20100SG-M3/4W
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 20A 100V TO-220AB
VS-41HFR40
VS-41HFR40
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 40A DO203AB
IDP45E60XKSA2
IDP45E60XKSA2
Infineon Technologies
DISCRETE SWITCHES
VS-10ETF12SPBF
VS-10ETF12SPBF
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1.2KV 10A TO263AB
FRA804G-BP
FRA804G-BP
Micro Commercial Co
DIODE FAST REC TO-220AC
S8K-AU_R1_000A1
S8K-AU_R1_000A1
Panjit International Inc.
SMC, GENERAL

Related Product By Brand

DSA80C100PB
DSA80C100PB
IXYS
DIODE ARRAY SCHOTTKY 100V TO220
MDA72-14N1B
MDA72-14N1B
IXYS
DIODE MODULE 1.4KV 113A TO240AA
IXTB62N50L
IXTB62N50L
IXYS
MOSFET N-CH 500V 62A PLUS264
IXTP2R4N120P
IXTP2R4N120P
IXYS
MOSFET N-CH 1200V 2.4A TO220AB
IXFA26N50P3
IXFA26N50P3
IXYS
MOSFET N-CH 500V 26A TO263
IXFH74N20P
IXFH74N20P
IXYS
MOSFET N-CH 200V 74A TO247AD
IXTQ200N06P
IXTQ200N06P
IXYS
MOSFET N-CH 60V 200A TO3P
IXYX140N120A4
IXYX140N120A4
IXYS
IGBT 140A 1200V PLUS247
IXGH36N60B3
IXGH36N60B3
IXYS
IGBT 600V 92A 250W TO247
IXGA20N100
IXGA20N100
IXYS
IGBT 1000V 40A 150W TO263
IXGH28N60B
IXGH28N60B
IXYS
IGBT 600V 40A 150W TO247AD
IXGK50N60C2D1
IXGK50N60C2D1
IXYS
IGBT 600V 75A 480W TO264AA