DSEI30-12A
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IXYS DSEI30-12A

Manufacturer No:
DSEI30-12A
Manufacturer:
IXYS
Package:
Tube
Datasheet:
DSEI30-12A Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 1.2KV 26A TO247AD
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1200 V
Current - Average Rectified (Io):26A
Voltage - Forward (Vf) (Max) @ If:2.55 V @ 30 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):60 ns
Current - Reverse Leakage @ Vr:750 µA @ 1200 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-247-2
Supplier Device Package:TO-247AD
Operating Temperature - Junction:-40°C ~ 150°C
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Similar Products

Part Number DSEI30-12A DSEP30-12A   DSI30-12A   DSEI60-12A   DSEI20-12A   DSEI30-10A  
Manufacturer IXYS IXYS IXYS IXYS IXYS IXYS
Product Status Active Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 1200 V 1200 V 1200 V 1200 V 1200 V 1000 V
Current - Average Rectified (Io) 26A 30A 30A 52A 17A 30A
Voltage - Forward (Vf) (Max) @ If 2.55 V @ 30 A 2.74 V @ 30 A 1.29 V @ 30 A 2.55 V @ 60 A 2.15 V @ 12 A 2.4 V @ 36 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 60 ns 40 ns - 60 ns 60 ns 50 ns
Current - Reverse Leakage @ Vr 750 µA @ 1200 V 250 µA @ 1200 V 40 µA @ 1200 V 2.2 mA @ 1200 V 750 µA @ 1200 V 750 µA @ 1000 V
Capacitance @ Vr, F - - 10pF @ 400V, 1MHz - - -
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-247-2 TO-247-2 TO-220-2 TO-247-2 TO-220-2 TO-247-2
Supplier Device Package TO-247AD TO-247AD TO-220AC TO-247AD TO-220AC TO-247AD
Operating Temperature - Junction -40°C ~ 150°C -55°C ~ 175°C -40°C ~ 175°C -40°C ~ 150°C -40°C ~ 150°C -40°C ~ 150°C

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