DSEI30-06A
  • Share:

IXYS DSEI30-06A

Manufacturer No:
DSEI30-06A
Manufacturer:
IXYS
Package:
Tube
Datasheet:
DSEI30-06A Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 600V 37A TO247AD
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):37A
Voltage - Forward (Vf) (Max) @ If:1.6 V @ 37 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:100 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-247-2
Supplier Device Package:TO-247AD
Operating Temperature - Junction:-40°C ~ 150°C
0 Remaining View Similar

In Stock

$4.14
45

Please send RFQ , we will respond immediately.

Similar Products

Part Number DSEI30-06A DSEI60-06A   DSEP30-06A  
Manufacturer IXYS IXYS IXYS
Product Status Active Active Active
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 600 V
Current - Average Rectified (Io) 37A 60A 30A
Voltage - Forward (Vf) (Max) @ If 1.6 V @ 37 A 1.8 V @ 70 A 1.6 V @ 30 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns 50 ns 35 ns
Current - Reverse Leakage @ Vr 100 µA @ 600 V 200 µA @ 600 V 250 µA @ 600 V
Capacitance @ Vr, F - - -
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-247-2 TO-247-2 TO-247-2
Supplier Device Package TO-247AD TO-247AD TO-247AD
Operating Temperature - Junction -40°C ~ 150°C -40°C ~ 150°C -55°C ~ 175°C

Related Product By Categories

SS2P4-M3/84A
SS2P4-M3/84A
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 40V 2A DO220AA
1N5402K
1N5402K
Diotec Semiconductor
DIODE STD DO-15 200V 3A
FM1600W
FM1600W
Rectron USA
DIODE GEN PURP 1600V 500MA SMX
MR756
MR756
Solid State Inc.
RECT 600 V 6 AMPS
SF68G R0G
SF68G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 6A DO201AD
AR3PKHM3_A/I
AR3PKHM3_A/I
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 800V 1.6A TO277A
G3S06503H
G3S06503H
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 3A 2-PIN
MA2SD3000L
MA2SD3000L
Panasonic Electronic Components
DIODE SCHOTTKY 30V 100MA SSMINI2
VS-8ETL06FPPBF
VS-8ETL06FPPBF
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 8A TO220FP
SF20GG-T
SF20GG-T
Diodes Incorporated
DIODE GEN PURP 400V 2A DO15
FGP30CHE3/54
FGP30CHE3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 150V 3A DO204AC
SR510HA0G
SR510HA0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 5A DO201AD

Related Product By Brand

MCO600-20IO1
MCO600-20IO1
IXYS
MOD THYRISTOR SGL 2000V Y1-CU
IXFH36N60X3
IXFH36N60X3
IXYS
MOSFET ULTRA JCT 600V 36A TO247
IXFH18N90P
IXFH18N90P
IXYS
MOSFET N-CH 900V 18A TO247AD
IXFK420N10T
IXFK420N10T
IXYS
MOSFET N-CH 100V 420A TO264AA
IXFN36N100
IXFN36N100
IXYS
MOSFET N-CH 1KV 36A SOT-227B
IXTP8N50P
IXTP8N50P
IXYS
MOSFET N-CH 500V 8A TO220AB
IXTA240N055T7
IXTA240N055T7
IXYS
MOSFET N-CH 55V 240A TO263-7
IXTA44N30T
IXTA44N30T
IXYS
MOSFET N-CH 300V 44A TO263
IXGK400N30A3
IXGK400N30A3
IXYS
IGBT 300V 400A 1000W TO264AA
IXYA50N65C3
IXYA50N65C3
IXYS
IGBT 650V 130A 600W TO263
IXGX50N60AU1
IXGX50N60AU1
IXYS
IGBT 600V 75A 300W TO247
IXI848AS1T/R
IXI848AS1T/R
IXYS
IC CURRENT MONITOR 0.7% 8SOIC