DSEI12-10A
  • Share:

IXYS DSEI12-10A

Manufacturer No:
DSEI12-10A
Manufacturer:
IXYS
Package:
Tube
Datasheet:
DSEI12-10A Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 1KV 12A TO220AC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1000 V
Current - Average Rectified (Io):12A
Voltage - Forward (Vf) (Max) @ If:2.7 V @ 12 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):60 ns
Current - Reverse Leakage @ Vr:250 µA @ 1000 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:TO-220AC
Operating Temperature - Junction:-40°C ~ 150°C
0 Remaining View Similar

In Stock

$1.99
266

Please send RFQ , we will respond immediately.

Similar Products

Part Number DSEI12-10A DSEI12-12A  
Manufacturer IXYS IXYS
Product Status Active Active
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 1000 V 1200 V
Current - Average Rectified (Io) 12A 11A
Voltage - Forward (Vf) (Max) @ If 2.7 V @ 12 A 2.6 V @ 12 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 60 ns 70 ns
Current - Reverse Leakage @ Vr 250 µA @ 1000 V 250 µA @ 1200 V
Capacitance @ Vr, F - -
Mounting Type Through Hole Through Hole
Package / Case TO-220-2 TO-220-2
Supplier Device Package TO-220AC TO-220AC
Operating Temperature - Junction -40°C ~ 150°C -40°C ~ 150°C

Related Product By Categories

SBA140AS_R1_00001
SBA140AS_R1_00001
Panjit International Inc.
SOD-123, SKY
SVT10100U_R1_00001
SVT10100U_R1_00001
Panjit International Inc.
EXTREME LOW VF SCHOTTKY BARRIER
CTLSH4-200M364 TR13 PBFREE
CTLSH4-200M364 TR13 PBFREE
Central Semiconductor Corp
DIODE SCHOTTKY 200V 4A 3TLM
ES3AHE3_A/H
ES3AHE3_A/H
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 3A DO214AB
NRVBA320T3G
NRVBA320T3G
onsemi
DIODE SCHOTTKY 20V 3A SMA
BAS85 L1G
BAS85 L1G
Taiwan Semiconductor Corporation
DIODE SCHTKY 30V 200MA MINI MELF
SR009HR1G
SR009HR1G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 90V 500MA DO204AL
UF1D R1G
UF1D R1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A DO204AL
SS29HM4G
SS29HM4G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 90V 2A DO214AA
MUR110SHR5G
MUR110SHR5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO214AA
SR209HB0G
SR209HB0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 90V 2A DO204AC
RB550VM-40FHTE-17
RB550VM-40FHTE-17
Rohm Semiconductor
RB550VM-40FH IS LOW V F

Related Product By Brand

DSEP29-06AS-TRL
DSEP29-06AS-TRL
IXYS
DIODE GEN PURP 600V 30A TO263
VVZ40-16IO1
VVZ40-16IO1
IXYS
RECT BRIDGE 3PH 34A 1600V KAMM
MCC44-16IO1B
MCC44-16IO1B
IXYS
MOD THYRISTOR DUAL 1600V TO240AA
IXFH10N100P
IXFH10N100P
IXYS
MOSFET N-CH 1000V 10A TO247AD
IXTH120P065T
IXTH120P065T
IXYS
MOSFET P-CH 65V 120A TO247
IXTH440N055T2
IXTH440N055T2
IXYS
MOSFET N-CH 55V 440A TO247
IXFH94N30T
IXFH94N30T
IXYS
MOSFET N-CH 300V 94A TO247AD
IXFE48N50QD2
IXFE48N50QD2
IXYS
MOSFET N-CH 500V 41A SOT-227B
IXFN44N50U2
IXFN44N50U2
IXYS
MOSFET N-CH 500V 44A SOT-227B
IXGF20N300
IXGF20N300
IXYS
IGBT 3000V 22A 100W I4-PAK
IXGK50N90B2D1
IXGK50N90B2D1
IXYS
IGBT 900V 75A 400W TO264
IXGH35N120C
IXGH35N120C
IXYS
IGBT 1200V 70A 300W TO247AD