DPG10I300PA
  • Share:

IXYS DPG10I300PA

Manufacturer No:
DPG10I300PA
Manufacturer:
IXYS
Package:
Tube
Datasheet:
DPG10I300PA Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 300V 10A TO220AC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):300 V
Current - Average Rectified (Io):10A
Voltage - Forward (Vf) (Max) @ If:1.27 V @ 10 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):35 ns
Current - Reverse Leakage @ Vr:1 µA @ 300 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:TO-220AC
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

$1.64
354

Please send RFQ , we will respond immediately.

Similar Products

Part Number DPG10I300PA DPG10I400PA   DPG30I300PA   DPG15I300PA   DPG10I200PA  
Manufacturer IXYS IXYS IXYS IXYS IXYS
Product Status Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 300 V 400 V 300 V 300 V 200 V
Current - Average Rectified (Io) 10A 10A 30A 15A 10A
Voltage - Forward (Vf) (Max) @ If 1.27 V @ 10 A 1.32 V @ 10 A 1.35 V @ 30 A 1.26 V @ 15 A 1.27 V @ 10 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 35 ns 45 ns 35 ns 35 ns 35 ns
Current - Reverse Leakage @ Vr 1 µA @ 300 V 1 µA @ 400 V 1 µA @ 300 V 1 µA @ 300 V 1 µA @ 200 V
Capacitance @ Vr, F - - - - -
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-2 TO-220-2 TO-220-2 TO-220-2 TO-220-2
Supplier Device Package TO-220AC TO-220AC TO-220AC TO-220AC TO-220AC
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

Related Product By Categories

1N4154TAP
1N4154TAP
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 25V 150MA DO35
RS3G-E3/57T
RS3G-E3/57T
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 3A DO214AB
RJU6054SDPK-M0#T0
RJU6054SDPK-M0#T0
Renesas Electronics America Inc
RECTIFIER DIODE, 30A, 600V
STTH3R02RL
STTH3R02RL
STMicroelectronics
DIODE GEN PURP 200V 3A DO201AD
S380Y
S380Y
GeneSiC Semiconductor
DIODE GEN PURP 1.6KV 380A DO205
BAS16J/SG115
BAS16J/SG115
NXP USA Inc.
RECTIFIER DIODE, 0.25A, 100V
SS1FN6HM3/H
SS1FN6HM3/H
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 60V 1A DO219AB
BYS12-90-M3/TR3
BYS12-90-M3/TR3
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 90V 1.5A DO214AC
JANTXV1N5712-1
JANTXV1N5712-1
Microchip Technology
SCHOTTKY DIODE
STTH2L06RL
STTH2L06RL
STMicroelectronics
DIODE GEN PURP 600V 2A DO41
SS15HM2G
SS15HM2G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 50V 1A DO214AC
SFA803GHC0G
SFA803GHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 8A TO220AC

Related Product By Brand

DSEC59-06BC
DSEC59-06BC
IXYS
DIODE ARRAY 600V 30A ISOPLUS220
DNA30E2200PA
DNA30E2200PA
IXYS
DIODE GEN PURP 2.2KV 30A TO220AC
MCO25-12IO1
MCO25-12IO1
IXYS
MOD THYRISTOR SGL 1200V SOT-227B
IXFN520N075T2
IXFN520N075T2
IXYS
MOSFET N-CH 75V 480A SOT227B
IXTQ96N20P
IXTQ96N20P
IXYS
MOSFET N-CH 200V 96A TO3P
IXFT44N50P
IXFT44N50P
IXYS
MOSFET N-CH 500V 44A TO268
IXTP230N04T4
IXTP230N04T4
IXYS
MOSFET N-CH 40V 230A TO220AB
IXFA22N60P3
IXFA22N60P3
IXYS
MOSFET N-CH 600V 22A TO263AA
IXTQ160N10T
IXTQ160N10T
IXYS
MOSFET N-CH 100V 160A TO3P
IXTP2R4N50P
IXTP2R4N50P
IXYS
MOSFET N-CH 500V 2.4A TO220AB
IXTH1N100
IXTH1N100
IXYS
MOSFET N-CH 1000V 1.5A TO247
IXGP30N60C3D4
IXGP30N60C3D4
IXYS
IGBT 600V 60A 220W TO220AB