DNA30E2200PA
  • Share:

IXYS DNA30E2200PA

Manufacturer No:
DNA30E2200PA
Manufacturer:
IXYS
Package:
Tube
Datasheet:
DNA30E2200PA Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 2.2KV 30A TO220AC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):2200 V
Current - Average Rectified (Io):30A
Voltage - Forward (Vf) (Max) @ If:1.26 V @ 30 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:40 µA @ 2200 V
Capacitance @ Vr, F:7pF @ 700V, 1MHz
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:TO-220AC
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

$4.52
71

Please send RFQ , we will respond immediately.

Similar Products

Part Number DNA30E2200PA DNA30E2200PC  
Manufacturer IXYS IXYS
Product Status Active Active
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 2200 V 2200 V
Current - Average Rectified (Io) 30A 30A
Voltage - Forward (Vf) (Max) @ If 1.26 V @ 30 A 1.26 V @ 30 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) - -
Current - Reverse Leakage @ Vr 40 µA @ 2200 V 40 µA @ 2200 V
Capacitance @ Vr, F 7pF @ 700V, 1MHz 7pF @ 700V, 1MHz
Mounting Type Through Hole Surface Mount
Package / Case TO-220-2 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package TO-220AC TO-263AA
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C

Related Product By Categories

EGP20A
EGP20A
Fairchild Semiconductor
RECTIFIER DIODE, 2A, 50V, DO-15
SS2030FL_R1_00001
SS2030FL_R1_00001
Panjit International Inc.
SOD-123FL, SKY
BYS11-90-E3/TR
BYS11-90-E3/TR
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 90V 1.5A DO214AC
UG06C
UG06C
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 600MA TS-1
HT15G
HT15G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A TS-1
JANS1N5809US/TR
JANS1N5809US/TR
Microchip Technology
RECTIFIER UFR,FRR
1N5397S-T
1N5397S-T
Diodes Incorporated
DIODE GEN PURP 600V 1.5A DO41
1N3613GPHE3/73
1N3613GPHE3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A DO204AL
CD216A-B120RLF
CD216A-B120RLF
Bourns Inc.
DIODE SCHOTTKY 20V 1A DO216AA
SK34B/TR13
SK34B/TR13
Microsemi Corporation
DIODE SCHOTTKY 40V 3A SMB
1N4005GPHM3/73
1N4005GPHM3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A DO204AL
HER201-AP
HER201-AP
Micro Commercial Co
DIODE GPP HE 2A DO-15

Related Product By Brand

VBO105-16NO7
VBO105-16NO7
IXYS
BRIDGE RECT 1P 1.6KV 107A PWS-C
MDMA85P1200TG
MDMA85P1200TG
IXYS
DIODE MODULE 1.2KV 85A TO240AA
DGS15-018CS
DGS15-018CS
IXYS
DIODE SCHOTTKY 180V 24A TO252AA
IXFA130N10T2-TRL
IXFA130N10T2-TRL
IXYS
MOSFET N-CH 100V 130A TO263
IXTA10P15T
IXTA10P15T
IXYS
MOSFET P-CH 150V 10A TO263
IXTQ32N65X
IXTQ32N65X
IXYS
MOSFET N-CH 650V 32A TO3P
IXFX44N80Q3
IXFX44N80Q3
IXYS
MOSFET N-CH 800V 44A PLUS247-3
IXTP2N80
IXTP2N80
IXYS
MOSFET N-CH 800V 2A TO220AB
IXFH60N20
IXFH60N20
IXYS
MOSFET N-CH 200V 60A TO247AD
IXBT42N170A
IXBT42N170A
IXYS
IGBT 1700V 42A 357W TO268
IXGT32N60C
IXGT32N60C
IXYS
IGBT 600V 60A 200W TO268
IXSH24N60U1
IXSH24N60U1
IXYS
IGBT 600V 48A 150W TO247