DLA40IM800PC-TRL
  • Share:

IXYS DLA40IM800PC-TRL

Manufacturer No:
DLA40IM800PC-TRL
Manufacturer:
IXYS
Package:
Tape & Reel (TR)
Datasheet:
DLA40IM800PC-TRL Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 800V 40A TO263
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):800 V
Current - Average Rectified (Io):40A
Voltage - Forward (Vf) (Max) @ If:1.3 V @ 40 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:10 µA @ 800 V
Capacitance @ Vr, F:10pF @ 400V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:TO-263AA
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

$2.20
196

Please send RFQ , we will respond immediately.

Similar Products

Part Number DLA40IM800PC-TRL DLA20IM800PC-TRL  
Manufacturer IXYS IXYS
Product Status Active Active
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 800 V 800 V
Current - Average Rectified (Io) 40A 20A
Voltage - Forward (Vf) (Max) @ If 1.3 V @ 40 A 1.2 V @ 20 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) - -
Current - Reverse Leakage @ Vr 10 µA @ 800 V 10 µA @ 800 V
Capacitance @ Vr, F 10pF @ 400V, 1MHz 4pF @ 400V, 1MHz
Mounting Type Surface Mount Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package TO-263AA TO-263AA
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C

Related Product By Categories

BAS40L-HG3-08
BAS40L-HG3-08
Vishay General Semiconductor - Diodes Division
SCHOTTKY DIODE DFN1006-2A
BA157GP-E3/54
BA157GP-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A DO204AL
1N4934-E3/73
1N4934-E3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 1A DO204AL
STTH12R06G
STTH12R06G
STMicroelectronics
DIODE GEN PURP 600V 12A D2PAK
SS12-M3/61T
SS12-M3/61T
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 1A 20V DO-214AC
RGP10K-E3/54
RGP10K-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 800V 1A DO204AL
EGP30CHE3/73
EGP30CHE3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 150V 3A GP20
CFRMT102-HF
CFRMT102-HF
Comchip Technology
DIODE GEN PURP 100V 1A SOD123H
JANTXV1N5621US
JANTXV1N5621US
Microchip Technology
DIODE GEN PURP 800V 1A D5A
ES1BLHRVG
ES1BLHRVG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A SUB SMA
F1T5G A0G
F1T5G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A TS-1
SF27G B0G
SF27G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 500V 2A DO204AC

Related Product By Brand

VBE60-06A
VBE60-06A
IXYS
BRIDGE RECT 1P 600V 60A SOT227B
VUO82-12NO7
VUO82-12NO7
IXYS
BRIDGE RECT 3P 1.2KV 88A PWS-D
DSEP30-12A
DSEP30-12A
IXYS
DIODE GEN PURP 1.2KV 30A TO247AD
DSA35-16A
DSA35-16A
IXYS
DIODE AVALANCHE 1.6KV 49A DO203
IXTK5N250
IXTK5N250
IXYS
MOSFET N-CH 2500V 5A TO264
IXTT140N10P
IXTT140N10P
IXYS
MOSFET N-CH 100V 140A TO268
IXTA200N055T2-TRL
IXTA200N055T2-TRL
IXYS
MOSFET N-CH 55V 200A TO263
IXTA270N04T4-7
IXTA270N04T4-7
IXYS
MOSFET N-CH 40V 270A TO263-7
IXTV36N50P
IXTV36N50P
IXYS
MOSFET N-CH 500V 36A PLUS220
IXTA200N075T7
IXTA200N075T7
IXYS
MOSFET N-CH 75V 200A TO263-7
IXBR42N170
IXBR42N170
IXYS
IGBT 1700V 57A 200W ISOPLUS247
IXGA30N60C3C1
IXGA30N60C3C1
IXYS
IGBT 600V 60A 220W TO263