DHG40C600PB
  • Share:

IXYS DHG40C600PB

Manufacturer No:
DHG40C600PB
Manufacturer:
IXYS
Package:
Tube
Datasheet:
DHG40C600PB Datasheet
ECAD Model:
-
Description:
DIODE ARRAY GP 600V 20A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Configuration:1 Pair Common Cathode
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io) (per Diode):20A
Voltage - Forward (Vf) (Max) @ If:2.32 V @ 20 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):35 ns
Current - Reverse Leakage @ Vr:30 µA @ 600 V
Operating Temperature - Junction:-55°C ~ 150°C
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220-3
0 Remaining View Similar

In Stock

-
170

Please send RFQ , we will respond immediately.

Similar Products

Part Number DHG40C600PB DHG10C600PB   DHG20C600PB   DHG40C600HB  
Manufacturer IXYS IXYS IXYS IXYS
Product Status Obsolete Active Active Active
Diode Configuration 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 600 V 600 V
Current - Average Rectified (Io) (per Diode) 20A 5A 10A 20A
Voltage - Forward (Vf) (Max) @ If 2.32 V @ 20 A 2.2 V @ 5 A 2.37 V @ 10 A 2.31 V @ 20 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 35 ns 35 ns 35 ns 35 ns
Current - Reverse Leakage @ Vr 30 µA @ 600 V 10 µA @ 600 V 15 µA @ 600 V 30 µA @ 600 V
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-247-3
Supplier Device Package TO-220-3 TO-220-3 TO-220-3 TO-247AD

Related Product By Categories

BAV99-AU_R1_000A1
BAV99-AU_R1_000A1
Panjit International Inc.
SOT-23, SWITCHING
DPG30C400HB
DPG30C400HB
IXYS
DIODE ARRAY GP 400V 15A TO247AD
SS10P2CLHM3_A/I
SS10P2CLHM3_A/I
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 10A 20V TO277A
UGF1606G
UGF1606G
Taiwan Semiconductor Corporation
DIODE ARRAY GP 400V ITO-220AB
BYQ28EF-200HE3_A/P
BYQ28EF-200HE3_A/P
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 200V 5A ITO220AB
DST40100C
DST40100C
Littelfuse Inc.
DIODE ARRAY SCHOTKY 100V TO220AB
MSRTA500140A
MSRTA500140A
GeneSiC Semiconductor
DIODE MODULE 1.4KV 500A 3TOWER
MBR60060CTR
MBR60060CTR
GeneSiC Semiconductor
DIODE MODULE 60V 300A 2TOWER
MURTA600120
MURTA600120
GeneSiC Semiconductor
DIODE GEN 1.2KV 300A 3 TOWER
1SS383T1G
1SS383T1G
onsemi
DIODE ARRAY SCHOTTKY 40V SC82
UB30DCT-E3/8W
UB30DCT-E3/8W
Vishay General Semiconductor - Diodes Division
DIODE RECT 30A 200V 25NS TO-263A
SR10150
SR10150
Taiwan Semiconductor Corporation
DIODE ARRAY SCHOTTKY 150V TO220

Related Product By Brand

DSEC30-12A
DSEC30-12A
IXYS
DIODE ARRAY GP 1200V 15A TO247AD
DSEI8-06AS-TRL
DSEI8-06AS-TRL
IXYS
DIODE GEN PURP 600V 8A TO263AB
DSA300I200NA
DSA300I200NA
IXYS
DIODE SCHOTTKY 200V 300A SOT227B
MMO90-12IO6
MMO90-12IO6
IXYS
MODULE AC CTLR 1200V SOT-227B
IXTQ14N60P
IXTQ14N60P
IXYS
MOSFET N-CH 600V 14A TO3P
IXFH170N25X3
IXFH170N25X3
IXYS
MOSFET N-CH 250V 170A TO247
IXFA130N10T
IXFA130N10T
IXYS
MOSFET N-CH 100V 130A TO263
IXTP75N10P
IXTP75N10P
IXYS
MOSFET N-CH 100V 75A TO220AB
IXFT18N100Q3
IXFT18N100Q3
IXYS
MOSFET N-CH 1000V 18A TO268
IXFQ12N80P
IXFQ12N80P
IXYS
MOSFET N-CH 800V 12A TO3P
IXTH182N055T
IXTH182N055T
IXYS
MOSFET N-CH 55V 182A TO247
IXSH20N60B2D1
IXSH20N60B2D1
IXYS
IGBT 600V 35A 190W TO247