DHG30I600PA
  • Share:

IXYS DHG30I600PA

Manufacturer No:
DHG30I600PA
Manufacturer:
IXYS
Package:
Tube
Datasheet:
DHG30I600PA Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 600V 30A TO220AC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):30A
Voltage - Forward (Vf) (Max) @ If:2.37 V @ 30 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):35 ns
Current - Reverse Leakage @ Vr:50 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:TO-220AC
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

$3.09
201

Please send RFQ , we will respond immediately.

Similar Products

Part Number DHG30I600PA DHG10I600PA   DHG20I600PA   DHG30I600HA  
Manufacturer IXYS IXYS IXYS IXYS
Product Status Active Active Active Active
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 600 V 600 V
Current - Average Rectified (Io) 30A 10A 20A 30A
Voltage - Forward (Vf) (Max) @ If 2.37 V @ 30 A 2.35 V @ 10 A 2.32 V @ 20 A 2.36 V @ 30 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 35 ns 35 ns 35 ns 35 ns
Current - Reverse Leakage @ Vr 50 µA @ 600 V 15 µA @ 600 V 30 µA @ 600 V 50 µA @ 600 V
Capacitance @ Vr, F - - - -
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-2 TO-220-2 TO-220-2 TO-247-2
Supplier Device Package TO-220AC TO-220AC TO-220AC TO-247
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

Related Product By Categories

121SPC045A
121SPC045A
SMC Diode Solutions
DIODE SCHOTTKY 45V 120A SPD-3A
S2MAL
S2MAL
Taiwan Semiconductor Corporation
2A, 1000V, STANDARD RECOVERY REC
CURA107-G
CURA107-G
Comchip Technology
DIODE GEN PURP 1KV 1A DO214AC
FFSB3065B
FFSB3065B
onsemi
650V 30A SIC SBD GEN1.5
US1G-M3/5AT
US1G-M3/5AT
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A DO214AC
SDURF2060
SDURF2060
SMC Diode Solutions
DIODE GEN PURP 600V 20A ITO220AC
UPS560/TR13
UPS560/TR13
Microchip Technology
DIODE SCHOTTKY 60V 5A POWERMITE
JAN1N5553/TR
JAN1N5553/TR
Microchip Technology
STD RECTIFIER
GP10AHE3/54
GP10AHE3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 1A DO204AL
GP25M-E3/54
GP25M-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 2.5A DO201
EGP10G-M3/73
EGP10G-M3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A DO204AL
MUR190A R0G
MUR190A R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 900V 1A DO204AL

Related Product By Brand

DGSS10-060CC
DGSS10-060CC
IXYS
DIODE ARRAY SCHOTTKY 600V 25A
DMA10P1600PZ-TUB
DMA10P1600PZ-TUB
IXYS
POWER DIODE DISCRETES-RECTIFIER
DSS16-0045B
DSS16-0045B
IXYS
DIODE SCHOTTKY 45V 16A TO220AC
CMA20E1600PB
CMA20E1600PB
IXYS
SCR 1.6KV 31A TO220
IXFH24N90P
IXFH24N90P
IXYS
MOSFET N-CH 900V 24A TO247AD
IXTU02N50D
IXTU02N50D
IXYS
MOSFET N-CH 500V 200MA TO251
IXFX66N50Q2
IXFX66N50Q2
IXYS
MOSFET N-CH 500V 66A PLUS247-3
IXFR90N20
IXFR90N20
IXYS
MOSFET N-CH 200V 90A ISOPLUS247
IXGH2N250
IXGH2N250
IXYS
IGBT 2500V 5.5A 32W TO247
IXGH32N170
IXGH32N170
IXYS
IGBT 1700V 75A 350W TO247AD
IXXH50N60B3D1
IXXH50N60B3D1
IXYS
IGBT 600V 120A 600W TO247
IXGH24N60A
IXGH24N60A
IXYS
IGBT 600V 48A 150W TO247AD