DHG30I1200HA
  • Share:

IXYS DHG30I1200HA

Manufacturer No:
DHG30I1200HA
Manufacturer:
IXYS
Package:
Tube
Datasheet:
DHG30I1200HA Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 1.2KV 30A TO247
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1200 V
Current - Average Rectified (Io):30A
Voltage - Forward (Vf) (Max) @ If:2.26 V @ 30 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):200 ns
Current - Reverse Leakage @ Vr:50 µA @ 1200 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-247-2
Supplier Device Package:TO-247
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

$5.11
7

Please send RFQ , we will respond immediately.

Similar Products

Part Number DHG30I1200HA DHG60I1200HA   DHG20I1200HA  
Manufacturer IXYS IXYS IXYS
Product Status Active Active Active
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 1200 V 1200 V 1200 V
Current - Average Rectified (Io) 30A 60A 20A
Voltage - Forward (Vf) (Max) @ If 2.26 V @ 30 A 2.32 V @ 60 A 2.24 V @ 20 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 200 ns 200 ns 200 ns
Current - Reverse Leakage @ Vr 50 µA @ 1200 V 125 µA @ 1200 V 25 µA @ 1200 V
Capacitance @ Vr, F - - -
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-247-2 TO-247-2 TO-247-2
Supplier Device Package TO-247 TO-247AD TO-247
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

Related Product By Categories

PX1500G-CT
PX1500G-CT
Diotec Semiconductor
CUT-TAPE VERSION. STANDARD RECO
BAS1603WE6327HTSA1
BAS1603WE6327HTSA1
Infineon Technologies
DIODE GEN PURP 80V 250MA SOD323
BAS16WS-HE3-18
BAS16WS-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 250MA SOD323
MBR8150_T0_00001
MBR8150_T0_00001
Panjit International Inc.
SCHOTTKY BARRIER RECTIFIERS
SS19 R3G
SS19 R3G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 90V 1A DO214AC
SBR3U60P5Q-7
SBR3U60P5Q-7
Diodes Incorporated
DIODE SBR 60V 3A POWERDI5
VS-41HFR120
VS-41HFR120
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1.2KV 40A DO203AB
MBRS4201T3
MBRS4201T3
onsemi
DIODE SCHOTTKY 200V 4A SMC
MA27077G0L
MA27077G0L
Panasonic Electronic Components
DIODE GP 35V 100MA SSSMINI2-F3
SS10PH10HM3/87A
SS10PH10HM3/87A
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 10A TO277A
RSFBL M2G
RSFBL M2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 500MA SUBSMA
ES1BLHRVG
ES1BLHRVG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A SUB SMA

Related Product By Brand

MDD200-16N1
MDD200-16N1
IXYS
DIODE MODULE 1.6KV 224A Y4-M6
DPG20C400PC-TRL
DPG20C400PC-TRL
IXYS
DIODE ARRAY GP 400V 10A TO263
IXTA44P15T
IXTA44P15T
IXYS
MOSFET P-CH 150V 44A TO263
IXFK90N65X3
IXFK90N65X3
IXYS
MOSFET 90A 650V X3 TO264K
IXFK26N60Q
IXFK26N60Q
IXYS
MOSFET N-CH 600V 26A TO264AA
IXGN60N60
IXGN60N60
IXYS
IGBT MOD 600V 100A 250W SOT227B
IXYX25N250CV1HV
IXYX25N250CV1HV
IXYS
IGBT 2500V 235A PLUS247
IXBK55N300
IXBK55N300
IXYS
IGBT 3000V 130A 625W TO264
IXGH72N60A3
IXGH72N60A3
IXYS
IGBT 600V 75A 540W TO247
IXGA48N60C3
IXGA48N60C3
IXYS
IGBT 600V 75A 300W TO263AA
IXBT32N300
IXBT32N300
IXYS
IGBT 3000V 80A 400W TO268
IX2R11S3T/R
IX2R11S3T/R
IXYS
IC GATE DRVR HALF-BRIDGE 16SOIC