DHG30I1200HA
  • Share:

IXYS DHG30I1200HA

Manufacturer No:
DHG30I1200HA
Manufacturer:
IXYS
Package:
Tube
Datasheet:
DHG30I1200HA Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 1.2KV 30A TO247
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1200 V
Current - Average Rectified (Io):30A
Voltage - Forward (Vf) (Max) @ If:2.26 V @ 30 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):200 ns
Current - Reverse Leakage @ Vr:50 µA @ 1200 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-247-2
Supplier Device Package:TO-247
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

$5.11
7

Please send RFQ , we will respond immediately.

Similar Products

Part Number DHG30I1200HA DHG60I1200HA   DHG20I1200HA  
Manufacturer IXYS IXYS IXYS
Product Status Active Active Active
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 1200 V 1200 V 1200 V
Current - Average Rectified (Io) 30A 60A 20A
Voltage - Forward (Vf) (Max) @ If 2.26 V @ 30 A 2.32 V @ 60 A 2.24 V @ 20 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 200 ns 200 ns 200 ns
Current - Reverse Leakage @ Vr 50 µA @ 1200 V 125 µA @ 1200 V 25 µA @ 1200 V
Capacitance @ Vr, F - - -
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-247-2 TO-247-2 TO-247-2
Supplier Device Package TO-247 TO-247AD TO-247
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

Related Product By Categories

UF4006-E3/54
UF4006-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 800V 1A DO204AL
US2D-TP
US2D-TP
Micro Commercial Co
DIODE GEN PURP 200V 2A DO214AA
MBR120LSFT3G
MBR120LSFT3G
onsemi
DIODE SCHOTTKY 20V 1A SOD123L
GI502-E3/54
GI502-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 3A DO201AD
BYV16-TR
BYV16-TR
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 1KV 1.5A SOD57
JANTX1N5551/TR
JANTX1N5551/TR
Microchip Technology
STD RECTIFIER
JANTXV1N5417
JANTXV1N5417
Microchip Technology
DIODE GEN PURP 200V 3A AXIAL
BYD13DGPHE3/73
BYD13DGPHE3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 1A DO204AL
SB330S-E3/54
SB330S-E3/54
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 3A DO204AC
RGP10BHM3/54
RGP10BHM3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 1A DO204AL
VI20150SHM3/4W
VI20150SHM3/4W
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 20A 150V TO-262AA
FR606-TP
FR606-TP
Micro Commercial Co
DIODE GPP FAST 6A R-6

Related Product By Brand

VBO160-18NO7
VBO160-18NO7
IXYS
BRIDGE RECT 1P 1.8KV 174A PWS-E
DSEP30-06B
DSEP30-06B
IXYS
DIODE GP 600V 30A ISOPLUS247
IXTP44P15T
IXTP44P15T
IXYS
MOSFET P-CH 150V 44A TO220AB
IXTT30N60L2
IXTT30N60L2
IXYS
MOSFET N-CH 600V 30A TO268
IXFK32N100Q3
IXFK32N100Q3
IXYS
MOSFET N-CH 1000V 32A TO264AA
IXFH42N60P3
IXFH42N60P3
IXYS
MOSFET N-CH 600V 42A TO247AD
IXFN200N07
IXFN200N07
IXYS
MOSFET N-CH 70V 200A SOT-227B
IXFK35N50
IXFK35N50
IXYS
MOSFET N-CH 500V 35A TO264AA
MIXA20WB1200TED
MIXA20WB1200TED
IXYS
IGBT MODULE 1200V 28A 100W E2
IXYP20N65B3D1
IXYP20N65B3D1
IXYS
DISC IGBT XPT-GENX3 TO-220AB/FP
IXDF402SI
IXDF402SI
IXYS
IC GATE DRVR LOW-SIDE 8SOIC
IXS839S1T/R
IXS839S1T/R
IXYS
IC GATE DRVR HALF-BRIDGE 8SOIC