DHG20I600PA
  • Share:

IXYS DHG20I600PA

Manufacturer No:
DHG20I600PA
Manufacturer:
IXYS
Package:
Tube
Datasheet:
DHG20I600PA Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 600V 20A TO220AC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):20A
Voltage - Forward (Vf) (Max) @ If:2.32 V @ 20 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):35 ns
Current - Reverse Leakage @ Vr:30 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:TO-220AC
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

$2.85
316

Please send RFQ , we will respond immediately.

Similar Products

Part Number DHG20I600PA DHG30I600PA   DHG10I600PA   DHG20I600HA  
Manufacturer IXYS IXYS IXYS IXYS
Product Status Active Active Active Active
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 600 V 600 V
Current - Average Rectified (Io) 20A 30A 10A 20A
Voltage - Forward (Vf) (Max) @ If 2.32 V @ 20 A 2.37 V @ 30 A 2.35 V @ 10 A 2.24 V @ 20 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 35 ns 35 ns 35 ns 40 ns
Current - Reverse Leakage @ Vr 30 µA @ 600 V 50 µA @ 600 V 15 µA @ 600 V 25 µA @ 600 V
Capacitance @ Vr, F - - - -
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-2 TO-220-2 TO-220-2 TO-247-2
Supplier Device Package TO-220AC TO-220AC TO-220AC TO-247
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

Related Product By Categories

SD103B-TR
SD103B-TR
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V DO35
BAS21Q-13-F
BAS21Q-13-F
Diodes Incorporated
HIVOLT SWITCHING DIODE BVR > 100
1N649-1/TR
1N649-1/TR
Microchip Technology
SIGNAL/COMPUTER DIODE
RGP30K-E3/54
RGP30K-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 800V 3A DO201AD
VS-120NQ045PBF
VS-120NQ045PBF
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 45V 120A D-67
VI20120SG-E3/4W
VI20120SG-E3/4W
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 120V 20A TO262AA
NTSB20120CTG
NTSB20120CTG
onsemi
RECTIFIER DIODE, SCHOTTKY, 1 PHA
V10P10HE3/87A
V10P10HE3/87A
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 10A TO277A
FR602
FR602
SMC Diode Solutions
DIODE GEN PURP 100V 6A R-6
RS1GLHMHG
RS1GLHMHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 800MA SUBSMA
JANTXV1N6864US/TR
JANTXV1N6864US/TR
Microchip Technology
DIODE SMALL-SIGNAL SCHOTTKY
UF1A
UF1A
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A DO-41

Related Product By Brand

VUE75-06NO7
VUE75-06NO7
IXYS
BRIDGE RECT 3P 600V 86A ECO-PAC1
VBO72-18NO7
VBO72-18NO7
IXYS
BRIDGE RECT 1P 1.8KV 72A PWS-D
VUB160-16NOX
VUB160-16NOX
IXYS
BRIDGE RECT 3P 1.6KV 180A V2-PAK
MDD56-14N1B
MDD56-14N1B
IXYS
DIODE MODULE 1.4KV 95A TO240AA
DSA30C45PB
DSA30C45PB
IXYS
DIODE ARRAY SCHOTTKY 45V TO220AB
W6672TJ350
W6672TJ350
IXYS
DIODE GEN PURP 1.9KV 6672A -
IXFT69N30P
IXFT69N30P
IXYS
MOSFET N-CH 300V 69A TO268
IXFK24N90Q
IXFK24N90Q
IXYS
MOSFET N-CH 900V 24A TO264AA
IXKC25N80C
IXKC25N80C
IXYS
MOSFET N-CH 800V 25A ISOPLUS220
IXTH230N085T
IXTH230N085T
IXYS
MOSFET N-CH 85V 230A TO247
IXTU05N100
IXTU05N100
IXYS
MOSFET N-CH 1000V 750MA TO251
IXGA12N60B
IXGA12N60B
IXYS
IGBT 600V 24A 100W TO263AA