DHG20I1200HA
  • Share:

IXYS DHG20I1200HA

Manufacturer No:
DHG20I1200HA
Manufacturer:
IXYS
Package:
Tube
Datasheet:
DHG20I1200HA Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 1.2KV 20A TO247
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1200 V
Current - Average Rectified (Io):20A
Voltage - Forward (Vf) (Max) @ If:2.24 V @ 20 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):200 ns
Current - Reverse Leakage @ Vr:25 µA @ 1200 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-247-2
Supplier Device Package:TO-247
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

$4.72
131

Please send RFQ , we will respond immediately.

Similar Products

Part Number DHG20I1200HA DHG20I1200PA   DHG30I1200HA   DHG60I1200HA  
Manufacturer IXYS IXYS IXYS IXYS
Product Status Active Active Active Active
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 1200 V 1200 V 1200 V 1200 V
Current - Average Rectified (Io) 20A 20A 30A 60A
Voltage - Forward (Vf) (Max) @ If 2.24 V @ 20 A 2.7 V @ 20 A 2.26 V @ 30 A 2.32 V @ 60 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 200 ns 75 ns 200 ns 200 ns
Current - Reverse Leakage @ Vr 25 µA @ 1200 V 30 µA @ 1200 V 50 µA @ 1200 V 125 µA @ 1200 V
Capacitance @ Vr, F - - - -
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-247-2 TO-220-2 TO-247-2 TO-247-2
Supplier Device Package TO-247 TO-220AC TO-247 TO-247AD
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

Related Product By Categories

CD1408-FF11000
CD1408-FF11000
Bourns Inc.
DIODE GEN PURP 1KV 1A 1408
SK25
SK25
Diotec Semiconductor
SCHOTTKY SMB 50V 2A
1SS394TE85LF
1SS394TE85LF
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 10V 100MA SC59
MAU211100B
MAU211100B
Panasonic Electronic Components
DIODE GP 80V 100MA USSMINI2-F1
FFSB2065BDN-F085
FFSB2065BDN-F085
onsemi
SIC DIODE 650V
RGP10AHE3/54
RGP10AHE3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 1A DO204AL
SB360S-E3/54
SB360S-E3/54
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 60V 3A DO204AC
VS-6TQ040-N3
VS-6TQ040-N3
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 40V 6A TO220AC
S8JCHR7G
S8JCHR7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 8A DO214AB
SF67GHB0G
SF67GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 500V 6A DO201AD
JANTX1N645-1/TR
JANTX1N645-1/TR
Microchip Technology
SIGNAL/COMPUTER DIODE
JANKCA1N5286
JANKCA1N5286
Microchip Technology
CURRENT REGULATOR

Related Product By Brand

VBO160-18NO7
VBO160-18NO7
IXYS
BRIDGE RECT 1P 1.8KV 174A PWS-E
DMA10P1600HR
DMA10P1600HR
IXYS
POWER DIODE DISC-RECTIFIER ISOPL
DGS3-030AS
DGS3-030AS
IXYS
DIODE SCHOTTKY 300V 5A TO252AA
DSA2-12A
DSA2-12A
IXYS
DIODE AVALANCHE 1200V 3.6A AXIAL
VTO110-14IO7
VTO110-14IO7
IXYS
RECT BRIDGE 3PH 1400V PWS-E-2
IXFA20N85XHV-TRL
IXFA20N85XHV-TRL
IXYS
MOSFET N-CH 850V 20A TO263HV
IXFH76N07-11
IXFH76N07-11
IXYS
MOSFET N-CH 70V 76A TO247AD
IXTR62N15P
IXTR62N15P
IXYS
MOSFET N-CH 150V 36A ISOPLUS247
IXFB120N50P2
IXFB120N50P2
IXYS
MOSFET N-CH 500V 120A PLUS264
IXBK55N300
IXBK55N300
IXYS
IGBT 3000V 130A 625W TO264
IXBL64N250
IXBL64N250
IXYS
IGBT 2500V 116A 500W ISOPLUSI5
IXCP60M45
IXCP60M45
IXYS
IC CURRENT REGULATOR TO220AB