DHG20I1200HA
  • Share:

IXYS DHG20I1200HA

Manufacturer No:
DHG20I1200HA
Manufacturer:
IXYS
Package:
Tube
Datasheet:
DHG20I1200HA Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 1.2KV 20A TO247
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1200 V
Current - Average Rectified (Io):20A
Voltage - Forward (Vf) (Max) @ If:2.24 V @ 20 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):200 ns
Current - Reverse Leakage @ Vr:25 µA @ 1200 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-247-2
Supplier Device Package:TO-247
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

$4.72
131

Please send RFQ , we will respond immediately.

Similar Products

Part Number DHG20I1200HA DHG20I1200PA   DHG30I1200HA   DHG60I1200HA  
Manufacturer IXYS IXYS IXYS IXYS
Product Status Active Active Active Active
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 1200 V 1200 V 1200 V 1200 V
Current - Average Rectified (Io) 20A 20A 30A 60A
Voltage - Forward (Vf) (Max) @ If 2.24 V @ 20 A 2.7 V @ 20 A 2.26 V @ 30 A 2.32 V @ 60 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 200 ns 75 ns 200 ns 200 ns
Current - Reverse Leakage @ Vr 25 µA @ 1200 V 30 µA @ 1200 V 50 µA @ 1200 V 125 µA @ 1200 V
Capacitance @ Vr, F - - - -
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-247-2 TO-220-2 TO-247-2 TO-247-2
Supplier Device Package TO-247 TO-220AC TO-247 TO-247AD
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

Related Product By Categories

UF4002-E3/54
UF4002-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 1A DO204AL
GV810B_R2_00001
GV810B_R2_00001
Panjit International Inc.
SURFACE MOUNT RECTIFIER
MB26_R1_00001
MB26_R1_00001
Panjit International Inc.
SURFACE MOUNT SCHOTTKY BARRIER R
SD060SE45B.T
SD060SE45B.T
SMC Diode Solutions
DIODE SCHOTTKY 45V 3A DIE
RS1DFA
RS1DFA
onsemi
DIODE GP 200V 800MA SOD123FA
VS-4EVH01HM3/I
VS-4EVH01HM3/I
Vishay General Semiconductor - Diodes Division
DIODE GEN PURPOSE 100V SLIMDPAK
FES8HT-E3/45
FES8HT-E3/45
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 500V 8A TO220AC
VS-30ETH06S-M3
VS-30ETH06S-M3
Vishay General Semiconductor - Diodes Division
DIODE ULTRA FAST 600V 30A D2PAK
MBR16H45-E3/45
MBR16H45-E3/45
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 45V 16A TO220AC
ES1DHR3G
ES1DHR3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A DO214AC
SRAF1660HC0G
SRAF1660HC0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 16A ITO220AC
SR105H
SR105H
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 1A 50V DO-41

Related Product By Brand

DMA10P1600PZ-TUB
DMA10P1600PZ-TUB
IXYS
POWER DIODE DISCRETES-RECTIFIER
MCC26-12IO1B
MCC26-12IO1B
IXYS
MOD THYRISTOR DUAL 1200V TO240AA
IXTX32P60P
IXTX32P60P
IXYS
MOSFET P-CH 600V 32A PLUS247-3
IXFA36N60X3
IXFA36N60X3
IXYS
MOSFET ULTRA JCT 600V 36A TO263
IXTA150N15X4
IXTA150N15X4
IXYS
MOSFET N-CH 150V 150A TO263AA
IXFP20N50P3
IXFP20N50P3
IXYS
MOSFET N-CH 500V 8A TO220AB
IXFQ12N80P
IXFQ12N80P
IXYS
MOSFET N-CH 800V 12A TO3P
IXTK75N30
IXTK75N30
IXYS
MOSFET N-CH 300V 75A TO264
IXFB120N50P2
IXFB120N50P2
IXYS
MOSFET N-CH 500V 120A PLUS264
IXGN80N60A2
IXGN80N60A2
IXYS
IGBT MOD 600V 160A 625W SOT227B
IXGP12N60C
IXGP12N60C
IXYS
IGBT 600V 24A 100W TO220
IXBL60N360
IXBL60N360
IXYS
IGBT 3600V 92A ISOPLUS I5PAK