DGS17-03CS
  • Share:

IXYS DGS17-03CS

Manufacturer No:
DGS17-03CS
Manufacturer:
IXYS
Package:
Tape & Reel (TR)
Datasheet:
DGS17-03CS Datasheet
ECAD Model:
-
Description:
DIODE SCHOTTKY 300V 29A TO252AA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):300 V
Current - Average Rectified (Io):29A
Voltage - Forward (Vf) (Max) @ If:1.9 V @ 7.5 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):23 ns
Current - Reverse Leakage @ Vr:250 µA @ 300 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:TO-252AA
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

-
315

Please send RFQ , we will respond immediately.

Similar Products

Part Number DGS17-03CS DGS17-030CS  
Manufacturer IXYS IXYS
Product Status Obsolete Obsolete
Diode Type Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 300 V 300 V
Current - Average Rectified (Io) 29A 29A
Voltage - Forward (Vf) (Max) @ If 1.9 V @ 7.5 A 1.9 V @ 7.5 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 23 ns 23 ns
Current - Reverse Leakage @ Vr 250 µA @ 300 V 250 µA @ 300 V
Capacitance @ Vr, F - -
Mounting Type Surface Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package TO-252AA TO-252AA
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C

Related Product By Categories

VSS8D3M10HM3/I
VSS8D3M10HM3/I
Vishay General Semiconductor - Diodes Division
3A, 100V, SLIMSMAW TRENCH SKY
NTE5857
NTE5857
NTE Electronics, Inc
R-300PRV 6A ANODE CASE
MUR130RLG
MUR130RLG
onsemi
DIODE GEN PURP 300V 1A AXIAL
1N6480HE3/96
1N6480HE3/96
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 1A DO213AB
NSR0320XV6T5G
NSR0320XV6T5G
onsemi
DIODE SCHOTTKY 23V 1A SOT563
JAN1N5189/TR
JAN1N5189/TR
Microchip Technology
RECTIFIER UFR,FRR
20ETF04S
20ETF04S
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 20A D2PAK
1N5391GPHE3/54
1N5391GPHE3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 1.5A DO204AC
MMSD4148-D87Z
MMSD4148-D87Z
onsemi
DIODE GEN PURP 100V 200MA SOD123
VS-10ETS08SPBF
VS-10ETS08SPBF
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 800V 10A TO263AB
SS14L MHG
SS14L MHG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 40V 1A SUB SMA
RB168VWM-30TR
RB168VWM-30TR
Rohm Semiconductor
30V, 1A, SINGLE, PMDE, ULTRA LOW

Related Product By Brand

VUO80-08NO1
VUO80-08NO1
IXYS
BRIDGE RECT 3PHASE 800V 82A V1-A
VBO13-14NO2
VBO13-14NO2
IXYS
BRIDGE RECT 1P 1.4KV 18A FO-A
DPH30IS600HI
DPH30IS600HI
IXYS
DIODE ARRAY 600V 30A ISOPLUS247
DSI30-12AS-TUB
DSI30-12AS-TUB
IXYS
DIODE GEN PURP 1.2KV 30A TO263
CLA80E1200HF
CLA80E1200HF
IXYS
SCR 1.2KV 126A PLUS247-3
IXFH80N65X2
IXFH80N65X2
IXYS
MOSFET N-CH 650V 80A TO247
IXFQ26N50Q
IXFQ26N50Q
IXYS
MOSFET N-CH 500V 26A TO3P
IXFT30N60Q
IXFT30N60Q
IXYS
MOSFET N-CH 600V 30A TO268
IXGR50N60C2
IXGR50N60C2
IXYS
IGBT 600V 75A 200W ISOPLUS247
IXGA12N60CD1
IXGA12N60CD1
IXYS
IGBT 600V 24A 100W TO263AA
IXGR39N60B
IXGR39N60B
IXYS
IGBT 600V 66A 140W ISOPLUS247
IXGH30N60B4
IXGH30N60B4
IXYS
IGBT 600V 66A 190W TO247