SPW47N65C3FKSA1
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Infineon Technologies SPW47N65C3FKSA1

Manufacturer No:
SPW47N65C3FKSA1
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
SPW47N65C3FKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 650V 47A TO247-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:47A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:70mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:3.9V @ 2.7mA
Gate Charge (Qg) (Max) @ Vgs:255 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:7000 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):415W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO247-3-1
Package / Case:TO-247-3
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$17.06
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Similar Products

Part Number SPW47N65C3FKSA1 SPW47N60C3FKSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Not For New Designs Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 47A (Tc) 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 70mOhm @ 30A, 10V 70mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 3.9V @ 2.7mA 3.9V @ 2.7mA
Gate Charge (Qg) (Max) @ Vgs 255 nC @ 10 V 320 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 7000 pF @ 25 V 6800 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 415W (Tc) 415W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO247-3-1 PG-TO247-3-1
Package / Case TO-247-3 TO-247-3

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