SPW35N60C3FKSA1
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Infineon Technologies SPW35N60C3FKSA1

Manufacturer No:
SPW35N60C3FKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
SPW35N60C3FKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 650V 34.6A TO247-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:34.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:100mOhm @ 21.9A, 10V
Vgs(th) (Max) @ Id:3.9V @ 1.9mA
Gate Charge (Qg) (Max) @ Vgs:200 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4500 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):313W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO247-3-1
Package / Case:TO-247-3
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$12.51
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Similar Products

Part Number SPW35N60C3FKSA1 SPW15N60C3FKSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Not For New Designs
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 34.6A (Tc) 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 100mOhm @ 21.9A, 10V 280mOhm @ 9.4A, 10V
Vgs(th) (Max) @ Id 3.9V @ 1.9mA 3.9V @ 675µA
Gate Charge (Qg) (Max) @ Vgs 200 nC @ 10 V 63 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4500 pF @ 25 V 1660 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 313W (Tc) 156W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO247-3-1 PG-TO247-3-1
Package / Case TO-247-3 TO-247-3

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