SPW32N50C3FKSA1
  • Share:

Infineon Technologies SPW32N50C3FKSA1

Manufacturer No:
SPW32N50C3FKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
SPW32N50C3FKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 560V 32A TO247-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):560 V
Current - Continuous Drain (Id) @ 25°C:32A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:110mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:3.9V @ 1.8mA
Gate Charge (Qg) (Max) @ Vgs:170 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4200 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):284W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO247-3-1
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

$11.08
65

Please send RFQ , we will respond immediately.

Similar Products

Part Number SPW32N50C3FKSA1 SPW52N50C3FKSA1   SPW12N50C3FKSA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Not For New Designs Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 560 V 560 V 560 V
Current - Continuous Drain (Id) @ 25°C 32A (Tc) 52A (Tc) 11.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 110mOhm @ 20A, 10V 70mOhm @ 30A, 10V 380mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 3.9V @ 1.8mA 3.9V @ 2.7mA 3.9V @ 500µA
Gate Charge (Qg) (Max) @ Vgs 170 nC @ 10 V 290 nC @ 10 V 49 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4200 pF @ 25 V 6800 pF @ 25 V 1200 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 284W (Tc) 417W (Tc) 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package PG-TO247-3-1 PG-TO247-3-1 PG-TO247-3-1
Package / Case TO-247-3 TO-247-3 TO-247-3

Related Product By Categories

EPC2202
EPC2202
EPC
GANFET N-CH 80V 18A DIE
IPAN70R900P7SXKSA1
IPAN70R900P7SXKSA1
Infineon Technologies
MOSFET N-CH 700V 6A TO220
TK7R0E08QM,S1X
TK7R0E08QM,S1X
Toshiba Semiconductor and Storage
UMOS10 TO-220AB 80V 7MOHM
FDB12N50FTM-WS
FDB12N50FTM-WS
onsemi
MOSFET N-CH 500V 11.5A D2PAK
PMV280ENEAR
PMV280ENEAR
Nexperia USA Inc.
MOSFET N-CH 100V 1.1A TO236AB
BSC060P03NS3EGATMA1
BSC060P03NS3EGATMA1
Infineon Technologies
MOSFET P-CH 30V 17.7/100A 8TDSON
MTD20P06HDL
MTD20P06HDL
onsemi
P-CHANNEL POWER MOSFET
NTS4001NT3G
NTS4001NT3G
onsemi
MOSFET N-CH 30V 270MA SC70
NTMS4816NR2G
NTMS4816NR2G
onsemi
MOSFET N-CH 30V 6.8A 8SOIC
SIHF840LCS-GE3
SIHF840LCS-GE3
Vishay Siliconix
MOSFET N-CH 500V 8A D2PAK
IRFP1405
IRFP1405
Infineon Technologies
MOSFET N-CH 55V 95A TO247AC
NTD18N06-1G
NTD18N06-1G
onsemi
MOSFET N-CH 60V 18A IPAK

Related Product By Brand

T1220N26TOFVTXPSA1
T1220N26TOFVTXPSA1
Infineon Technologies
SCR MODULE 2800V 2625A DO200AC
BC859-C
BC859-C
Infineon Technologies
TRANS PNP 30V 0.1A SOT23-3
IRFH8202TRPBF
IRFH8202TRPBF
Infineon Technologies
MOSFET N-CH 25V 47A/100A 8PQFN
IPI60R190C6XKSA1
IPI60R190C6XKSA1
Infineon Technologies
MOSFET N-CH 600V 20.2A TO262-3
IPF10N03LA
IPF10N03LA
Infineon Technologies
MOSFET N-CH 25V 30A TO252-3
FZ1200R12HP4HOSA2
FZ1200R12HP4HOSA2
Infineon Technologies
IGBT MOD 1200V 1790A 7150W
IRS21834SPBF
IRS21834SPBF
Infineon Technologies
IC GATE DRVR HALF-BRIDGE 14SOIC
MB90F022CPF-GS-9238E1
MB90F022CPF-GS-9238E1
Infineon Technologies
IC MCU MICOM FLASH 100QFP
MB91213APMC-GS-132E1
MB91213APMC-GS-132E1
Infineon Technologies
IC MCU 32BIT 544KB MROM 144LQFP
CY7C4245-15ASC
CY7C4245-15ASC
Infineon Technologies
IC SYNC FIFO MEM 4KX18 64LQFP
CY7C1021B-15VXE
CY7C1021B-15VXE
Infineon Technologies
IC SRAM 1MBIT PARALLEL 44SOJ
CY7C146-55JXCT
CY7C146-55JXCT
Infineon Technologies
IC SRAM 16KBIT PARALLEL 52PLCC